Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Z. Chen; Wen Lei; B. Chen; Y.B. Wang; X. Liao; H. Tan; J. Zou; S.P. Ringer; C. Jagadish

doi:10.1063/1.4859915

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Z. Chen, Wen Lei, B. Chen, Y.B. Wang, X. Liao, H. Tan, J. Zou, S.P. Ringer, C. Jagadish

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Abstract

Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density. © 2014 AIP Publishing LLC.

Original language	English
Article number	022108
Number of pages	7
Journal	Applied Physics Letters
Volume	104
Issue number	2
DOIs	https://doi.org/10.1063/1.4859915
Publication status	Published - 13 Jan 2014

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Copyright (2014) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 104, 022108 (2014) and may be found at http://dx.doi.org/10.1063/1.4859915.
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title = "Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition",

abstract = "Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density. {\textcopyright} 2014 AIP Publishing LLC.",

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AU - Chen, Z.

AU - Lei, Wen

AU - Chen, B.

AU - Wang, Y.B.

AU - Liao, X.

AU - Tan, H.

AU - Zou, J.

AU - Ringer, S.P.

AU - Jagadish, C.

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N2 - Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density. © 2014 AIP Publishing LLC.

AB - Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here, we report that, in the droplet epitaxy of InAs/GaAs(001) QDs using metal-organic chemical vapor deposition, significant elemental diffusion from the substrate to In droplets occurs, resulting in the formation of In(Ga)As crystals, before As flux is provided. The supply of As flux suppresses the further elemental diffusion from the substrate and promotes surface migration, leading to large island formation with a low island density. © 2014 AIP Publishing LLC.

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M3 - Article

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VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022108

ER -

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

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