Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique

Jarek Antoszewski; John Dell; Lorenzo Faraone; N. Bresson; S. Cristoloveanu

Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique

Jarek Antoszewski, John Dell, Lorenzo Faraone, N. Bresson, S. Cristoloveanu

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	Proceedings of the 39th European Solid-State Device Research Conference
Editors	Dimitris Tsoukalas, Athanasios Dimoulas
Place of Publication	USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	300-302
Volume	1
Edition	Athens, Greece
ISBN (Print)	9781424443512
Publication status	Published - 2009
Event	Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique - Athens, Greece Duration: 1 Jan 2009 → …

Conference

Conference	Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique
Period	1/01/09 → …

Cite this

Antoszewski, J., Dell, J., Faraone, L., Bresson, N., & Cristoloveanu, S. (2009). Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique. In D. Tsoukalas, & A. Dimoulas (Eds.), Proceedings of the 39th European Solid-State Device Research Conference (Athens, Greece ed., Vol. 1, pp. 300-302). IEEE, Institute of Electrical and Electronics Engineers.

Antoszewski, Jarek ; Dell, John ; Faraone, Lorenzo et al. / Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique. Proceedings of the 39th European Solid-State Device Research Conference. editor / Dimitris Tsoukalas ; Athanasios Dimoulas. Vol. 1 Athens, Greece. ed. USA : IEEE, Institute of Electrical and Electronics Engineers, 2009. pp. 300-302

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author = "Jarek Antoszewski and John Dell and Lorenzo Faraone and N. Bresson and S. Cristoloveanu",

year = "2009",

language = "English",

isbn = "9781424443512",

volume = "1",

pages = "300--302",

editor = "Dimitris Tsoukalas and Athanasios Dimoulas",

booktitle = "Proceedings of the 39th European Solid-State Device Research Conference",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

edition = "Athens, Greece",

note = "Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique ; Conference date: 01-01-2009",

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Antoszewski, J , Dell, J , Faraone, L, Bresson, N & Cristoloveanu, S 2009, Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique. in D Tsoukalas & A Dimoulas (eds), Proceedings of the 39th European Solid-State Device Research Conference. Athens, Greece edn, vol. 1, IEEE, Institute of Electrical and Electronics Engineers, USA, pp. 300-302, Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique, 1/01/09.

Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique. / Antoszewski, Jarek ; Dell, John ; Faraone, Lorenzo et al.
Proceedings of the 39th European Solid-State Device Research Conference. ed. / Dimitris Tsoukalas; Athanasios Dimoulas. Vol. 1 Athens, Greece. ed. USA: IEEE, Institute of Electrical and Electronics Engineers, 2009. p. 300-302.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique

AU - Antoszewski, Jarek

AU - Dell, John

AU - Faraone, Lorenzo

AU - Bresson, N.

AU - Cristoloveanu, S.

PY - 2009

Y1 - 2009

M3 - Conference paper

SN - 9781424443512

VL - 1

SP - 300

EP - 302

BT - Proceedings of the 39th European Solid-State Device Research Conference

A2 - Tsoukalas, Dimitris

A2 - Dimoulas, Athanasios

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - USA

T2 - Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique

Y2 - 1 January 2009

ER -

Antoszewski J , Dell J , Faraone L, Bresson N, Cristoloveanu S. Electron magnetoresistance mobility in silicon on insulator layers using Kelvin's technique. In Tsoukalas D, Dimoulas A, editors, Proceedings of the 39th European Solid-State Device Research Conference. Athens, Greece ed. Vol. 1. USA: IEEE, Institute of Electrical and Electronics Engineers. 2009. p. 300-302