Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN

D.K.W. Wee; Giacinta Parish; Brett Nener

doi:10.1109/COMMAD.2010.5699739

Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN

D.K.W. Wee, Giacinta Parish, Brett Nener

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices COMMAD 2010 Proceedings
Editors	Hark Hoe Tan
Place of Publication	United States of America
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	201-202
Volume	1
Edition	Canberra, ACT, Australia
ISBN (Print)	9781424473328
DOIs	https://doi.org/10.1109/COMMAD.2010.5699739
Publication status	Published - 2010
Event	Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN - Canberra, Australia Duration: 1 Jan 2010 → …

Conference

Conference	Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN
Period	1/01/10 → …

Access to Document

10.1109/COMMAD.2010.5699739

Cite this

Wee, D. K. W., Parish, G., & Nener, B. (2010). Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN. In H. H. Tan (Ed.), 2010 Conference on Optoelectronic and Microelectronic Materials and Devices COMMAD 2010 Proceedings (Canberra, ACT, Australia ed., Vol. 1, pp. 201-202). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/COMMAD.2010.5699739

Wee, D.K.W. ; Parish, Giacinta ; Nener, Brett. / Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN. 2010 Conference on Optoelectronic and Microelectronic Materials and Devices COMMAD 2010 Proceedings. editor / Hark Hoe Tan. Vol. 1 Canberra, ACT, Australia. ed. United States of America : IEEE, Institute of Electrical and Electronics Engineers, 2010. pp. 201-202

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title = "Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN",

author = "D.K.W. Wee and Giacinta Parish and Brett Nener",

year = "2010",

doi = "10.1109/COMMAD.2010.5699739",

language = "English",

isbn = "9781424473328",

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booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices COMMAD 2010 Proceedings",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

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Wee, DKW, Parish, G & Nener, B 2010, Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN. in HH Tan (ed.), 2010 Conference on Optoelectronic and Microelectronic Materials and Devices COMMAD 2010 Proceedings. Canberra, ACT, Australia edn, vol. 1, IEEE, Institute of Electrical and Electronics Engineers, United States of America, pp. 201-202, Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN, 1/01/10. https://doi.org/10.1109/COMMAD.2010.5699739

Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN. / Wee, D.K.W.; Parish, Giacinta ; Nener, Brett.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices COMMAD 2010 Proceedings. ed. / Hark Hoe Tan. Vol. 1 Canberra, ACT, Australia. ed. United States of America: IEEE, Institute of Electrical and Electronics Engineers, 2010. p. 201-202.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

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T1 - Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN

AU - Wee, D.K.W.

AU - Parish, Giacinta

AU - Nener, Brett

PY - 2010

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BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices COMMAD 2010 Proceedings

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PB - IEEE, Institute of Electrical and Electronics Engineers

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T2 - Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN

Y2 - 1 January 2010

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Wee DKW, Parish G , Nener B. Electron-Beam Induced Current Measurements of diffusion length in Si doped MOCVD grown GaN. In Tan HH, editor, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices COMMAD 2010 Proceedings. Canberra, ACT, Australia ed. Vol. 1. United States of America: IEEE, Institute of Electrical and Electronics Engineers. 2010. p. 201-202 doi: 10.1109/COMMAD.2010.5699739