Electrically Pumped GaAsBi Laser Diodes

Shumin Wang, Xiaoyan Wu, Juanjuan Liu, Wenwu Pan, Chunfang Cao, Liyao Zhang, Yuxin Song, Yaoyao Li

Research output: Chapter in Book/Conference paperConference paper

Abstract

In this paper, we present electrically pumped GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy. The LDs reveal a record long lasing wavelength of 1.14 mu m at 300 K and can be operated under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm(-1). The characteristic temperature is 79 K in the temperature range of 225-350 K and the temperature coefficient of the lasing wavelength is 0.26 nm/K at 77 - 350 K, much smaller than 0.35 - 0.40 nm/K for InGaAs and InGaAsP QW LDs. These results suggest that GaAsBi LDs are attractive candidates for uncooled near infrared lasers on GaAs.

Original languageEnglish
Title of host publication2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON)
PublisherWiley-IEEE Press
Number of pages3
ISBN (Print)9781538608586
DOIs
Publication statusPublished - 2017
Externally publishedYes
Event19th International Conference on Transparent Optical Networks (ICTON) - Girona, Spain
Duration: 2 Jul 20176 Jul 2017

Publication series

NameInternational Conference on Transparent Optical Networks-ICTON
PublisherIEEE
ISSN (Print)2162-7339

Conference

Conference19th International Conference on Transparent Optical Networks (ICTON)
CountrySpain
CityGirona
Period2/07/176/07/17

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