Electrically Pumped GaAsBi Laser Diodes

Shumin Wang; Xiaoyan Wu; Juanjuan Liu; Wenwu Pan; Chunfang Cao; Liyao Zhang; Yuxin Song; Yaoyao Li

doi:10.1109/ICTON.2017.8024777

Electrically Pumped GaAsBi Laser Diodes

Shumin Wang, Xiaoyan Wu, Juanjuan Liu, Wenwu Pan, Chunfang Cao, Liyao Zhang, Yuxin Song, Yaoyao Li

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Abstract

In this paper, we present electrically pumped GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy. The LDs reveal a record long lasing wavelength of 1.14 mu m at 300 K and can be operated under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm(-1). The characteristic temperature is 79 K in the temperature range of 225-350 K and the temperature coefficient of the lasing wavelength is 0.26 nm/K at 77 - 350 K, much smaller than 0.35 - 0.40 nm/K for InGaAs and InGaAsP QW LDs. These results suggest that GaAsBi LDs are attractive candidates for uncooled near infrared lasers on GaAs.

Original language	English
Title of host publication	2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON)
Publisher	Wiley-IEEE Press
Number of pages	3
ISBN (Electronic)	9781538608586
ISBN (Print)	9781538608586
DOIs	https://doi.org/10.1109/ICTON.2017.8024777
Publication status	Published - 1 Sept 2017
Externally published	Yes
Event	19th International Conference on Transparent Optical Networks (ICTON) - Girona, Spain Duration: 2 Jul 2017 → 6 Jul 2017

Publication series

Name	International Conference on Transparent Optical Networks
ISSN (Electronic)	2162-7339

Conference

Conference	19th International Conference on Transparent Optical Networks (ICTON)
Country/Territory	Spain
City	Girona
Period	2/07/17 → 6/07/17

Access to Document

10.1109/ICTON.2017.8024777

Cite this

@inproceedings{9df577994daa419882eb260f73973837,

title = "Electrically Pumped GaAsBi Laser Diodes",

abstract = "In this paper, we present electrically pumped GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy. The LDs reveal a record long lasing wavelength of 1.14 mu m at 300 K and can be operated under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm(-1). The characteristic temperature is 79 K in the temperature range of 225-350 K and the temperature coefficient of the lasing wavelength is 0.26 nm/K at 77 - 350 K, much smaller than 0.35 - 0.40 nm/K for InGaAs and InGaAsP QW LDs. These results suggest that GaAsBi LDs are attractive candidates for uncooled near infrared lasers on GaAs.",

keywords = "GaAsBi, laser diodes, quantum well, molecular beam epitaxy",

author = "Shumin Wang and Xiaoyan Wu and Juanjuan Liu and Wenwu Pan and Chunfang Cao and Liyao Zhang and Yuxin Song and Yaoyao Li",

year = "2017",

month = sep,

day = "1",

doi = "10.1109/ICTON.2017.8024777",

language = "English",

isbn = "9781538608586",

series = "International Conference on Transparent Optical Networks",

publisher = "Wiley-IEEE Press",

booktitle = "2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON)",

note = "19th International Conference on Transparent Optical Networks (ICTON) ; Conference date: 02-07-2017 Through 06-07-2017",

}

Wang, S, Wu, X, Liu, J, Pan, W, Cao, C, Zhang, L, Song, Y & Li, Y 2017, Electrically Pumped GaAsBi Laser Diodes. in 2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON)., 8024777, International Conference on Transparent Optical Networks, Wiley-IEEE Press, 19th International Conference on Transparent Optical Networks (ICTON), Girona, Spain, 2/07/17. https://doi.org/10.1109/ICTON.2017.8024777

TY - GEN

T1 - Electrically Pumped GaAsBi Laser Diodes

AU - Wang, Shumin

AU - Wu, Xiaoyan

AU - Liu, Juanjuan

AU - Pan, Wenwu

AU - Cao, Chunfang

AU - Zhang, Liyao

AU - Song, Yuxin

AU - Li, Yaoyao

PY - 2017/9/1

Y1 - 2017/9/1

N2 - In this paper, we present electrically pumped GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy. The LDs reveal a record long lasing wavelength of 1.14 mu m at 300 K and can be operated under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm(-1). The characteristic temperature is 79 K in the temperature range of 225-350 K and the temperature coefficient of the lasing wavelength is 0.26 nm/K at 77 - 350 K, much smaller than 0.35 - 0.40 nm/K for InGaAs and InGaAsP QW LDs. These results suggest that GaAsBi LDs are attractive candidates for uncooled near infrared lasers on GaAs.

AB - In this paper, we present electrically pumped GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy. The LDs reveal a record long lasing wavelength of 1.14 mu m at 300 K and can be operated under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm(-1). The characteristic temperature is 79 K in the temperature range of 225-350 K and the temperature coefficient of the lasing wavelength is 0.26 nm/K at 77 - 350 K, much smaller than 0.35 - 0.40 nm/K for InGaAs and InGaAsP QW LDs. These results suggest that GaAsBi LDs are attractive candidates for uncooled near infrared lasers on GaAs.

KW - GaAsBi

KW - laser diodes

KW - quantum well

KW - molecular beam epitaxy

U2 - 10.1109/ICTON.2017.8024777

DO - 10.1109/ICTON.2017.8024777

M3 - Conference paper

SN - 9781538608586

T3 - International Conference on Transparent Optical Networks

BT - 2017 19TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON)

PB - Wiley-IEEE Press

T2 - 19th International Conference on Transparent Optical Networks (ICTON)

Y2 - 2 July 2017 through 6 July 2017

ER -

Electrically Pumped GaAsBi Laser Diodes

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