Electrically injected GaAsBi/GaAs single quantum well laser diodes

Juanjuan Liu; Wenwu Pan; Xiaoyan Wu; Chunfang Cao; Yaoyao Li; Xiren Chen; Yanchao Zhang; Lijuan Wang; Jinyi Yan; Dongliang Zhang; Yuxin Song; Jun Shao; Shumin Wang

doi:10.1063/1.4985231

Electrically injected GaAsBi/GaAs single quantum well laser diodes

Juanjuan Liu, Wenwu Pan, Xiaoyan Wu, Chunfang Cao, Yaoyao Li, Xiren Chen, Yanchao Zhang, Lijuan Wang, Jinyi Yan, Dongliang Zhang, Yuxin Song, Jun Shao, Shumin Wang

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2 Citations (Scopus)

Abstract

We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77˜150 K, and reduced to 90 K in the range of 150˜273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77˜273 K.

Original language	English
Pages (from-to)	115006
Journal	AIP Advances
Volume	7
Issue number	11
DOIs	https://doi.org/10.1063/1.4985231
Publication status	Published - 1 Nov 2017
Externally published	Yes

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10.1063/1.4985231Licence: CC BY

http://adsabs.harvard.edu/abs/2017AIPA....7k5006L

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@article{e0213d953d994bb48819225d282204b0,

title = "Electrically injected GaAsBi/GaAs single quantum well laser diodes",

abstract = "We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77˜150 K, and reduced to 90 K in the range of 150˜273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77˜273 K.",

author = "Juanjuan Liu and Wenwu Pan and Xiaoyan Wu and Chunfang Cao and Yaoyao Li and Xiren Chen and Yanchao Zhang and Lijuan Wang and Jinyi Yan and Dongliang Zhang and Yuxin Song and Jun Shao and Shumin Wang",

year = "2017",

month = nov,

day = "1",

doi = "10.1063/1.4985231",

language = "English",

volume = "7",

pages = "115006",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Electrically injected GaAsBi/GaAs single quantum well laser diodes

AU - Liu, Juanjuan

AU - Pan, Wenwu

AU - Wu, Xiaoyan

AU - Cao, Chunfang

AU - Li, Yaoyao

AU - Chen, Xiren

AU - Zhang, Yanchao

AU - Wang, Lijuan

AU - Yan, Jinyi

AU - Zhang, Dongliang

AU - Song, Yuxin

AU - Shao, Jun

AU - Wang, Shumin

PY - 2017/11/1

Y1 - 2017/11/1

N2 - We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77˜150 K, and reduced to 90 K in the range of 150˜273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77˜273 K.

AB - We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77˜150 K, and reduced to 90 K in the range of 150˜273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77˜273 K.

U2 - 10.1063/1.4985231

DO - 10.1063/1.4985231

M3 - Article

VL - 7

SP - 115006

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 11

ER -