Abstract
We present electrically injected GaAs/GaAsBi single quantum well laser
diodes (LDs) emitting at a record long wavelength of 1141 nm at room
temperature grown by molecular beam epitaxy. The LDs have excellent
device performances with internal quantum efficiency of 86%, internal
loss of 10 cm-1 and transparency current density of 196
A/cm2. The LDs can operate under continuous-wave mode up to
273 K. The characteristic temperature are extracted to be 125 K in the
temperature range of 77˜150 K, and reduced to 90 K in the range of
150˜273 K. The temperature coefficient of 0.3 nm/K is extracted in
the temperature range of 77˜273 K.
Original language | English |
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Pages (from-to) | 115006 |
Journal | AIP Advances |
Volume | 7 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1 Nov 2017 |
Externally published | Yes |