Electrically injected GaAsBi/GaAs single quantum well laser diodes

Juanjuan Liu, Wenwu Pan, Xiaoyan Wu, Chunfang Cao, Yaoyao Li, Xiren Chen, Yanchao Zhang, Lijuan Wang, Jinyi Yan, Dongliang Zhang, Yuxin Song, Jun Shao, Shumin Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs) emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77˜150 K, and reduced to 90 K in the range of 150˜273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77˜273 K.
Original languageEnglish
Pages (from-to)115006
JournalAIP Advances
Volume7
Issue number11
DOIs
Publication statusPublished - 1 Nov 2017
Externally publishedYes

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