Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate

M. Mikulics, P. Kordos, A. Fox, M. Kocan, H. Lueth, Z. Sofer, H. Hardtdegen

    Research output: Contribution to journalArticle

    14 Citations (Scopus)

    Abstract

    In this paper, we present the investigation of AlGaN/GaN heterostructures deposited on metallic/silver substrates by a novel "combined" two-step epitaxial procedure based on metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). The channel temperature was determined by high lateral and spectral resolution Raman spectroscopy. The characteristics of the structures were compared to those of conventional AlGaN/GaN layers deposited on sapphire. An improved heat dissipation in the metal substrate based HFETs leads to a significant decrease in channel temperature (-60% at 7 W/mm) and affects the long-term stability of the drain current (+2%) favorably in the whole range under investigation (up to 1000h). Metallic substrates are a viable solution toward highly reliable high -power devices and are beneficial to low power electronics as well, where the high integration density also calls for efficient heat dissipation. (C) 2017 Elsevier Ltd. All rights reserved.

    Original languageEnglish
    Pages (from-to)134-137
    Number of pages4
    JournalApplied Materials Today
    Volume7
    DOIs
    Publication statusPublished - Jun 2017

    Cite this