Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films

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    Abstract

    This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young's modulus and density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young's modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process. (c) 2005 American Institute of Physics.
    Original languageEnglish
    Pages (from-to)044904-1 to 044904-6
    JournalJournal of Applied Physics
    Volume98
    Issue number4
    DOIs
    Publication statusPublished - 2005

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    silicon nitrides
    physical properties
    mechanical properties
    cantilever beams
    thin films
    modulus of elasticity
    temperature
    cold plasmas
    micromachining
    densification
    nanoindentation
    quartz crystals
    microbalances
    microscopes
    wafers
    vapors
    physics
    silicon

    Cite this

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    title = "Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films",
    abstract = "This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young's modulus and density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young's modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process. (c) 2005 American Institute of Physics.",
    author = "B.A. Walmsley and Yinong Liu and Xiao Hu and Mark Bush and K.J. Winchester and Mariusz Martyniuk and John Dell and Lorenzo Faraone",
    year = "2005",
    doi = "10.1063/1.2006972",
    language = "English",
    volume = "98",
    pages = "044904--1 to 044904--6",
    journal = "J. Applied Physics",
    issn = "0021-8979",
    publisher = "ACOUSTICAL SOC AMER AMER INST PHYSICS",
    number = "4",

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    TY - JOUR

    T1 - Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films

    AU - Walmsley, B.A.

    AU - Liu, Yinong

    AU - Hu, Xiao

    AU - Bush, Mark

    AU - Winchester, K.J.

    AU - Martyniuk, Mariusz

    AU - Dell, John

    AU - Faraone, Lorenzo

    PY - 2005

    Y1 - 2005

    N2 - This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young's modulus and density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young's modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process. (c) 2005 American Institute of Physics.

    AB - This study investigates the mechanical and physical properties of low-temperature plasma-enhanced chemical-vapor-deposited silicon nitride thin films, with particular respect to the effect of deposition temperature. The mechanical properties of the films were evaluated by both nanoindentation and microcantilever beam-bending techniques. The cantilever beam specimens were fabricated from silicon nitride thin films deposited on (100) silicon wafer by bulk micromachining. The density of the films was determined from quartz crystal microbalance measurements, as well as from the resonant modes of the cantilever beams, which were mechanically excited using an atomic force microscope. It was found that both the Young's modulus and density of the films were significantly reduced with decreasing deposition temperature. The decrease in Young's modulus is attributed to the decreasing material density. The decrease in density with decreasing deposition temperature is believed to be due to the slower diffusion rates of the deposited species, which retarded the densification of the film during the deposition process. (c) 2005 American Institute of Physics.

    U2 - 10.1063/1.2006972

    DO - 10.1063/1.2006972

    M3 - Article

    VL - 98

    SP - 044904-1 to 044904-6

    JO - J. Applied Physics

    JF - J. Applied Physics

    SN - 0021-8979

    IS - 4

    ER -