TY - GEN
T1 - Effects of ad-atom diffusivity throughout Sb-mediated formation of Ge/Si nanoislands
AU - Tonkikh, Alexander A.
AU - Zakharov, Nikolay D.
AU - Suvorova, Alexandra A.
AU - Werner, Peter
N1 - Funding Information:
Authors would like to acknowledge the financial support of the German Science Foundation (DFG-RFBR project 436/RUS 113) and the technical support of A.Frommfeld and S.Hopfe.
PY - 2011
Y1 - 2011
N2 - The effect of Sb on the formation of Ge nano islands in Si by means of molecular beam epitaxy is reported. We observe in the Ge/Si(100) system a non-monotonic dependence of the Stranski-Krastanov critical thickness of Ge islands formation on the adsorbed Sb amount. Dome-and hut-shaped Ge islands are replaced with the pyramids, when Ge is deposited on the Sb-covered Si(100) surface. The Sb-mediated conservation of the shape of Ge islands during embedding them in Si is shown. We assume that the decrease of the surface diffusion of Si and Ge ad-atoms causes these effects.
AB - The effect of Sb on the formation of Ge nano islands in Si by means of molecular beam epitaxy is reported. We observe in the Ge/Si(100) system a non-monotonic dependence of the Stranski-Krastanov critical thickness of Ge islands formation on the adsorbed Sb amount. Dome-and hut-shaped Ge islands are replaced with the pyramids, when Ge is deposited on the Sb-covered Si(100) surface. The Sb-mediated conservation of the shape of Ge islands during embedding them in Si is shown. We assume that the decrease of the surface diffusion of Si and Ge ad-atoms causes these effects.
UR - http://www.scopus.com/inward/record.url?scp=84879359217&partnerID=8YFLogxK
U2 - 10.1557/opl.2012.758
DO - 10.1557/opl.2012.758
M3 - Conference paper
AN - SCOPUS:84879359217
SN - 9781627482257
T3 - Materials Research Society Symposium Proceedings
SP - 55
EP - 59
BT - Self Organization and Nanoscale Pattern Formation
T2 - 2011 MRS Fall Meeting
Y2 - 28 November 2011 through 3 December 2011
ER -