Effect of thermal annealing on stress relaxation and crystallisation of ion beam sputtered amorphous Si1-xGex thin films

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Si1-xGex (0≤x≤1) thin films were deposited by means of biased target ion beam sputtering at a low substrate temperature near 100 °C inside a vacuum chamber. The as-deposited films were all found to be amorphous and to be compressively stressed, and the magnitude of the compressive stress was found to decrease with increasing Ge content. Heat treatment for 30 min under vacuum conditions in the range from 100 °C to 800 °C was found to relax the compressive stress and to eventually cause crystallisation of the films at higher temperatures. The temperature required to achieve full stress relaxation was found to decrease with increasing Ge content, and to be well below that for film crystallisation. Annealing at temperatures above the crystallisation temperature caused physical damage to films containing >50 at.% Ge. Films with <50 at.% Ge showed no damage after annealing up to 800 °C.

Original languageEnglish
Pages (from-to)389-397
Number of pages9
JournalMaterials and Design
Volume156
DOIs
Publication statusPublished - 15 Oct 2018

Fingerprint

Stress relaxation
Crystallization
Ion beams
Annealing
Thin films
Compressive stress
Temperature
Vacuum
Sputtering
Heat treatment
Hot Temperature
Substrates

Cite this

@article{2b0558fbfd7e4f2a8e810c363f7d640f,
title = "Effect of thermal annealing on stress relaxation and crystallisation of ion beam sputtered amorphous Si1-xGex thin films",
abstract = "Si1-xGex (0≤x≤1) thin films were deposited by means of biased target ion beam sputtering at a low substrate temperature near 100 °C inside a vacuum chamber. The as-deposited films were all found to be amorphous and to be compressively stressed, and the magnitude of the compressive stress was found to decrease with increasing Ge content. Heat treatment for 30 min under vacuum conditions in the range from 100 °C to 800 °C was found to relax the compressive stress and to eventually cause crystallisation of the films at higher temperatures. The temperature required to achieve full stress relaxation was found to decrease with increasing Ge content, and to be well below that for film crystallisation. Annealing at temperatures above the crystallisation temperature caused physical damage to films containing >50 at.{\%} Ge. Films with <50 at.{\%} Ge showed no damage after annealing up to 800 °C.",
keywords = "Annealing, Biased target sputtering, SiGe, Stress relaxation, Thin films",
author = "F. Guo and M. Martyniuk and D. Silva and Y. Liu and K. Brookshire and L. Faraone",
year = "2018",
month = "10",
day = "15",
doi = "10.1016/j.matdes.2018.06.047",
language = "English",
volume = "156",
pages = "389--397",
journal = "MATERIALS & DESIGN",
issn = "0264-1275",
publisher = "Elsevier",

}

TY - JOUR

T1 - Effect of thermal annealing on stress relaxation and crystallisation of ion beam sputtered amorphous Si1-xGex thin films

AU - Guo, F.

AU - Martyniuk, M.

AU - Silva, D.

AU - Liu, Y.

AU - Brookshire, K.

AU - Faraone, L.

PY - 2018/10/15

Y1 - 2018/10/15

N2 - Si1-xGex (0≤x≤1) thin films were deposited by means of biased target ion beam sputtering at a low substrate temperature near 100 °C inside a vacuum chamber. The as-deposited films were all found to be amorphous and to be compressively stressed, and the magnitude of the compressive stress was found to decrease with increasing Ge content. Heat treatment for 30 min under vacuum conditions in the range from 100 °C to 800 °C was found to relax the compressive stress and to eventually cause crystallisation of the films at higher temperatures. The temperature required to achieve full stress relaxation was found to decrease with increasing Ge content, and to be well below that for film crystallisation. Annealing at temperatures above the crystallisation temperature caused physical damage to films containing >50 at.% Ge. Films with <50 at.% Ge showed no damage after annealing up to 800 °C.

AB - Si1-xGex (0≤x≤1) thin films were deposited by means of biased target ion beam sputtering at a low substrate temperature near 100 °C inside a vacuum chamber. The as-deposited films were all found to be amorphous and to be compressively stressed, and the magnitude of the compressive stress was found to decrease with increasing Ge content. Heat treatment for 30 min under vacuum conditions in the range from 100 °C to 800 °C was found to relax the compressive stress and to eventually cause crystallisation of the films at higher temperatures. The temperature required to achieve full stress relaxation was found to decrease with increasing Ge content, and to be well below that for film crystallisation. Annealing at temperatures above the crystallisation temperature caused physical damage to films containing >50 at.% Ge. Films with <50 at.% Ge showed no damage after annealing up to 800 °C.

KW - Annealing

KW - Biased target sputtering

KW - SiGe

KW - Stress relaxation

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85049570421&partnerID=8YFLogxK

U2 - 10.1016/j.matdes.2018.06.047

DO - 10.1016/j.matdes.2018.06.047

M3 - Article

VL - 156

SP - 389

EP - 397

JO - MATERIALS & DESIGN

JF - MATERIALS & DESIGN

SN - 0264-1275

ER -