Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy

X. Y. Wu; K. Wang; W. W. Pan; P. Wang; Y. Y. Li; Y. X. Song; Y. Gu; L. Yue; H. Xu; Z. P. Zhang; J. Cui; Q. Gong; S. M. Wang

doi:10.1088/0268-1242/30/9/094014

Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy

X. Y. Wu, K. Wang, W. W. Pan, P. Wang, Y. Y. Li, Y. X. Song, Y. Gu, L. Yue, H. Xu, Z. P. Zhang, J. Cui, Q. Gong, S. M. Wang

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16 Citations (Scopus)

Abstract

The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 degrees C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 degrees C. The InPBi sample annealed at 800 degrees C shows an unexpected PL spectrum with different energy transitions.

Original language	English
Article number	094014
Number of pages	4
Journal	Semiconductor Science and Technology
Volume	30
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/30/9/094014
Publication status	Published - Sept 2015
Externally published	Yes

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title = "Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy",

abstract = "The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 degrees C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 degrees C. The InPBi sample annealed at 800 degrees C shows an unexpected PL spectrum with different energy transitions.",

keywords = "InPBi, dilute bismides, thermal annealing, photoluminescence, deep level, thermal stability, BAND-GAP, GAAS1-XBIX, GAASBI, ALLOY",

author = "Wu, {X. Y.} and K. Wang and Pan, {W. W.} and P. Wang and Li, {Y. Y.} and Song, {Y. X.} and Y. Gu and L. Yue and H. Xu and Zhang, {Z. P.} and J. Cui and Q. Gong and Wang, {S. M.}",

year = "2015",

month = sep,

doi = "10.1088/0268-1242/30/9/094014",

language = "English",

volume = "30",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing",

number = "9",

}

TY - JOUR

T1 - Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy

AU - Wu, X. Y.

AU - Wang, K.

AU - Pan, W. W.

AU - Wang, P.

AU - Li, Y. Y.

AU - Song, Y. X.

AU - Gu, Y.

AU - Yue, L.

AU - Xu, H.

AU - Zhang, Z. P.

AU - Cui, J.

AU - Gong, Q.

AU - Wang, S. M.

PY - 2015/9

Y1 - 2015/9

N2 - The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 degrees C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 degrees C. The InPBi sample annealed at 800 degrees C shows an unexpected PL spectrum with different energy transitions.

AB - The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 degrees C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 degrees C. The InPBi sample annealed at 800 degrees C shows an unexpected PL spectrum with different energy transitions.

KW - InPBi

KW - dilute bismides

KW - thermal annealing

KW - photoluminescence

KW - deep level

KW - thermal stability

KW - BAND-GAP

KW - GAAS1-XBIX

KW - GAASBI

KW - ALLOY

U2 - 10.1088/0268-1242/30/9/094014

DO - 10.1088/0268-1242/30/9/094014

M3 - Article

SN - 0268-1242

VL - 30

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 9

M1 - 094014

ER -

Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy

Abstract

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