Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy

X. Y. Wu, K. Wang, W. W. Pan, P. Wang, Y. Y. Li, Y. X. Song, Y. Gu, L. Yue, H. Xu, Z. P. Zhang, J. Cui, Q. Gong, S. M. Wang

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The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 degrees C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 degrees C. The InPBi sample annealed at 800 degrees C shows an unexpected PL spectrum with different energy transitions.

Original languageEnglish
Article number094014
Number of pages4
JournalSemiconductor Science and Technology
Issue number9
Publication statusPublished - Sep 2015
Externally publishedYes

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