Effect of oxidation on the chemical bonding structure of PECVD SiN thin films

Neerushana Jehanathan; Yinong Liu; B. Walmsley; John Dell; Martin Saunders

doi:10.1063/1.2402581

Effect of oxidation on the chemical bonding structure of PECVD SiN thin films

Neerushana Jehanathan, Yinong Liu, B. Walmsley, John Dell, Martin Saunders

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Abstract

This study investigated the effect of oxidation on the chemical bonding structures of silicon nitride thin films synthesized by a low-temperature plasma-enhanced chemical vapor deposition (PECVD) method. These films were heat treated to different temperatures up to 1373 K. The bonding structures were studied by means of x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. It was found that the amorphous PECVD SiNx films were subjected to oxidation in air at elevated temperatures. The oxidation caused the formation of crystalline silicon dioxide within the matrix of amorphous silicon nitride, conforming to the "random mixing" model. The crystalline silicon dioxide formed is believed to be stoichiometric SiO2, whereas the remaining matrix is believed to be a nonstoichiometric silicon oxynitride with a structure conforming to the "random bonding" model. (c) 2006 American Institute of Physics.

Original language	English
Pages (from-to)	1-7
Journal	Journal of Applied Physics
Volume	100
DOIs	https://doi.org/10.1063/1.2402581
Publication status	Published - 2006

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title = "Effect of oxidation on the chemical bonding structure of PECVD SiN thin films",

abstract = "This study investigated the effect of oxidation on the chemical bonding structures of silicon nitride thin films synthesized by a low-temperature plasma-enhanced chemical vapor deposition (PECVD) method. These films were heat treated to different temperatures up to 1373 K. The bonding structures were studied by means of x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. It was found that the amorphous PECVD SiNx films were subjected to oxidation in air at elevated temperatures. The oxidation caused the formation of crystalline silicon dioxide within the matrix of amorphous silicon nitride, conforming to the {"}random mixing{"} model. The crystalline silicon dioxide formed is believed to be stoichiometric SiO2, whereas the remaining matrix is believed to be a nonstoichiometric silicon oxynitride with a structure conforming to the {"}random bonding{"} model. (c) 2006 American Institute of Physics.",

author = "Neerushana Jehanathan and Yinong Liu and B. Walmsley and John Dell and Martin Saunders",

year = "2006",

doi = "10.1063/1.2402581",

language = "English",

volume = "100",

pages = "1--7",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Effect of oxidation on the chemical bonding structure of PECVD SiN thin films

AU - Jehanathan, Neerushana

AU - Liu, Yinong

AU - Walmsley, B.

AU - Dell, John

AU - Saunders, Martin

PY - 2006

Y1 - 2006

N2 - This study investigated the effect of oxidation on the chemical bonding structures of silicon nitride thin films synthesized by a low-temperature plasma-enhanced chemical vapor deposition (PECVD) method. These films were heat treated to different temperatures up to 1373 K. The bonding structures were studied by means of x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. It was found that the amorphous PECVD SiNx films were subjected to oxidation in air at elevated temperatures. The oxidation caused the formation of crystalline silicon dioxide within the matrix of amorphous silicon nitride, conforming to the "random mixing" model. The crystalline silicon dioxide formed is believed to be stoichiometric SiO2, whereas the remaining matrix is believed to be a nonstoichiometric silicon oxynitride with a structure conforming to the "random bonding" model. (c) 2006 American Institute of Physics.

AB - This study investigated the effect of oxidation on the chemical bonding structures of silicon nitride thin films synthesized by a low-temperature plasma-enhanced chemical vapor deposition (PECVD) method. These films were heat treated to different temperatures up to 1373 K. The bonding structures were studied by means of x-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and transmission electron microscopy. It was found that the amorphous PECVD SiNx films were subjected to oxidation in air at elevated temperatures. The oxidation caused the formation of crystalline silicon dioxide within the matrix of amorphous silicon nitride, conforming to the "random mixing" model. The crystalline silicon dioxide formed is believed to be stoichiometric SiO2, whereas the remaining matrix is believed to be a nonstoichiometric silicon oxynitride with a structure conforming to the "random bonding" model. (c) 2006 American Institute of Physics.

U2 - 10.1063/1.2402581

DO - 10.1063/1.2402581

M3 - Article

SN - 0021-8979

VL - 100

SP - 1

EP - 7

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -

Effect of oxidation on the chemical bonding structure of PECVD SiN thin films

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