Effect of MBE Growth Conditions on Multiple Electron Transport in InN

T.B. Fehlberg, C.S. Gallinat, Gilberto A. Umana Membreno, G. Koblmuller, Brett Nener, J.S. Speck, Giacinta Parish

Research output: Contribution to journalArticle

9 Citations (Scopus)


A quantitative mobility spectrum analysis (QMSA) of multiple magnetic field data has been used to determine the transport properties of bulk and surface electron species in InN films, grown by plasma-assisted molecular beam epitaxy (PAMBE) with varying substrate temperatures and In/N flux ratios. While all films have similar bulk electron densities,similar to 4 x 10(17) cm(-3), the highest mobility was obtained in the highest growth temperature film (3100 cm(2)/V s at 150 K), while In-rich growth also gave good mobility values even at a much lower growth temperature. The surface sheet electron concentration increased with surface roughness, which increased with N-flux during growth.
Original languageEnglish
Pages (from-to)593-596
JournalJournal of Electronic Materials
Issue number5
Publication statusPublished - 2008

Fingerprint Dive into the research topics of 'Effect of MBE Growth Conditions on Multiple Electron Transport in InN'. Together they form a unique fingerprint.

Cite this