Effect of Implantation Temperature on Redistribution of AI in SiC During Annealing

I.O. Usov, Alexandra Suvorova, A.V. Suvorov

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Diffusion of aluminum in 6H-SiC during hight tempertaure annealing was studied. Al atoms were intriduced by ion implantation at various substrate temperatures. It has been shown that redistribution of Al atoms during the following annealing correlated with the amount and nature of residual damage created by ion bombardment.
Original languageEnglish
Pages (from-to)897-900
JournalMaterials Science Forum
Volume457-460
Publication statusPublished - 2004

Fingerprint

Dive into the research topics of 'Effect of Implantation Temperature on Redistribution of AI in SiC During Annealing'. Together they form a unique fingerprint.

Cite this