Effect of FIB milling on MEMS SOI Cantilevers

Venkatesh Chenniappan; P.P. Singh; M. Renilkumar; M. Varma; N. Bhat; R. Pratap; Mariusz Martyniuk; Adrian Keating; Gilberto A. Umana Membreno; Dilusha Silva; John Dell; Lorenzo Faraone

doi:10.1109/COMMAD.2012.6472412

Effect of FIB milling on MEMS SOI Cantilevers

Venkatesh Chenniappan, P.P. Singh, M. Renilkumar, M. Varma, N. Bhat, R. Pratap, Mariusz Martyniuk, Adrian Keating, Gilberto A. Umana Membreno, Dilusha Silva, John Dell, Lorenzo Faraone

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

2 Citations (Scopus)

Abstract

Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from −10MPa/µm to −120MPa/µm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.

Original language	English
Title of host publication	Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Place of Publication	United States
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	165-166
Volume	1
ISBN (Electronic)	9781467330466
ISBN (Print)	9781467330473
DOIs	https://doi.org/10.1109/COMMAD.2012.6472412
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Abbreviated title	COMMAD
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472412

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Chenniappan, V., Singh, P. P., Renilkumar, M., Varma, M., Bhat, N., Pratap, R., Martyniuk, M., Keating, A., Umana Membreno, G. A., Silva, D., Dell, J., & Faraone, L. (2012). Effect of FIB milling on MEMS SOI Cantilevers. In Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on (Vol. 1, pp. 165-166). IEEE, Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/COMMAD.2012.6472412

@inproceedings{e99898a20de847bbadcb4db3795bb865,

title = "Effect of FIB milling on MEMS SOI Cantilevers",

abstract = "Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from −10MPa/µm to −120MPa/µm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.",

author = "Venkatesh Chenniappan and P.P. Singh and M. Renilkumar and M. Varma and N. Bhat and R. Pratap and Mariusz Martyniuk and Adrian Keating and {Umana Membreno}, {Gilberto A.} and Dilusha Silva and John Dell and Lorenzo Faraone",

year = "2012",

doi = "10.1109/COMMAD.2012.6472412",

language = "English",

isbn = "9781467330473",

volume = "1",

pages = "165--166",

booktitle = "Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, COMMAD ; Conference date: 12-12-2012 Through 14-12-2012",

}

Chenniappan, V, Singh, PP, Renilkumar, M, Varma, M, Bhat, N, Pratap, R, Martyniuk, M , Keating, A , Umana Membreno, GA , Silva, D , Dell, J & Faraone, L 2012, Effect of FIB milling on MEMS SOI Cantilevers. in Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on. vol. 1, IEEE, Institute of Electrical and Electronics Engineers, United States, pp. 165-166, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472412

Effect of FIB milling on MEMS SOI Cantilevers. / Chenniappan, Venkatesh; Singh, P.P.; Renilkumar, M. et al.
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on. Vol. 1 United States: IEEE, Institute of Electrical and Electronics Engineers, 2012. p. 165-166.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Effect of FIB milling on MEMS SOI Cantilevers

AU - Chenniappan, Venkatesh

AU - Singh, P.P.

AU - Renilkumar, M.

AU - Varma, M.

AU - Bhat, N.

AU - Pratap, R.

AU - Martyniuk, Mariusz

AU - Keating, Adrian

AU - Umana Membreno, Gilberto A.

AU - Silva, Dilusha

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2012

Y1 - 2012

N2 - Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from −10MPa/µm to −120MPa/µm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.

AB - Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from −10MPa/µm to −120MPa/µm, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.

U2 - 10.1109/COMMAD.2012.6472412

DO - 10.1109/COMMAD.2012.6472412

M3 - Conference paper

SN - 9781467330473

VL - 1

SP - 165

EP - 166

BT - Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - United States

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Effect of FIB milling on MEMS SOI Cantilevers

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