Effect of Annealing on the Structural and FMR Properties of Epitaxial YIG Thin Films Grown by RF Magnetron Sputtering

Biswanath Bhoi, Narayanan Venkataramani, Ramnath P.R.C. Aiyar, Shiva Prasad, Mikhail Kostylev

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The growth- and frequency-dependent microwave studies on ~ 250 nm thick Y₃Fe₅O₁₂ [yttrium iron garnet (YIG)] films deposited on Gd₃Ga₅O₁₂ (111) (gadolinium gallium garnet) substrates by RF magnetron sputtering has been reported. After the deposition, the thin films were ex-situ annealed in air at 700 °C for different time intervals (2, 4, 6, and 10 h) and a pure YIG phase with preferred (111) orientation was formed. Effective saturation magnetization (4π Meff) has been estimated from ferromagnetic resonance (FMR) data using Kittel's equations. A negative uniaxial magnetic anisotropy has been observed which decreased with the increase in annealing time. The FMR linewidth (Δ H) for the 10 h annealed film was found to be nearly half of the one annealed for 2 h. The 10 h annealed film showed a Δ H value which lies between 30 and 50 Oe over a wide frequency range (2-18 GHz). This improvement in the microwave properties as a result of annealing is attributed to the reduction of defects and relaxation of stress.

Original languageEnglish
Article number2801205
JournalIEEE Transactions on Magnetics
Volume54
Issue number11
DOIs
Publication statusPublished - Nov 2018

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