Dynamic behavior of coupled memristor circuits

D. Yu, Ho Ching Iu, Y. Liang, Tyrone Fernando, L.O. Chua

    Research output: Contribution to journalArticlepeer-review

    48 Citations (Scopus)


    © 2004-2012 IEEE. This paper reports on the dynamic behavior of dual coupled memristors (MRs) in serial and parallel connections in consideration of polarity combination and coupling strength. Based on the constitutive relations, two flux coupled MRs are adopted for demonstration to theoretically exhibit the variation of memductance in terms of flux, charge, voltage, and current. The coupled MRs are also serially connected with a regular resistor to further explore its memristive behavior. Theoretical analysis reported in this paper is confirmed via a simulation study, and then an experimental investigation is carried out using a practical circuit emulating the dual coupled MRs. Good agreement between experimental and simulation results confirms that dual coupled MRs in composite connections behave as a new MR with higher complexity.
    Original languageEnglish
    Pages (from-to)1607-1616
    JournalIEEE Transactions on Circuits and Systems I: Regular Papers
    Issue number6
    Publication statusPublished - 2015


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