Dynamic behavior of coupled memristor circuits

D. Yu; Ho Ching Iu; Y. Liang; Tyrone Fernando; L.O. Chua

doi:10.1109/TCSI.2015.2418836

Dynamic behavior of coupled memristor circuits

D. Yu, Ho Ching Iu, Y. Liang, Tyrone Fernando, L.O. Chua

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

© 2004-2012 IEEE. This paper reports on the dynamic behavior of dual coupled memristors (MRs) in serial and parallel connections in consideration of polarity combination and coupling strength. Based on the constitutive relations, two flux coupled MRs are adopted for demonstration to theoretically exhibit the variation of memductance in terms of flux, charge, voltage, and current. The coupled MRs are also serially connected with a regular resistor to further explore its memristive behavior. Theoretical analysis reported in this paper is confirmed via a simulation study, and then an experimental investigation is carried out using a practical circuit emulating the dual coupled MRs. Good agreement between experimental and simulation results confirms that dual coupled MRs in composite connections behave as a new MR with higher complexity.

Original language	English
Pages (from-to)	1607-1616
Journal	IEEE Transactions on Circuits and Systems I: Regular Papers
Volume	62
Issue number	6
DOIs	https://doi.org/10.1109/TCSI.2015.2418836
Publication status	Published - 2015

Access to Document

10.1109/TCSI.2015.2418836

Cite this

@article{43aef902aa674625996f6a0f3a583bc6,

title = "Dynamic behavior of coupled memristor circuits",

abstract = "{\textcopyright} 2004-2012 IEEE. This paper reports on the dynamic behavior of dual coupled memristors (MRs) in serial and parallel connections in consideration of polarity combination and coupling strength. Based on the constitutive relations, two flux coupled MRs are adopted for demonstration to theoretically exhibit the variation of memductance in terms of flux, charge, voltage, and current. The coupled MRs are also serially connected with a regular resistor to further explore its memristive behavior. Theoretical analysis reported in this paper is confirmed via a simulation study, and then an experimental investigation is carried out using a practical circuit emulating the dual coupled MRs. Good agreement between experimental and simulation results confirms that dual coupled MRs in composite connections behave as a new MR with higher complexity.",

author = "D. Yu and Iu, {Ho Ching} and Y. Liang and Tyrone Fernando and L.O. Chua",

year = "2015",

doi = "10.1109/TCSI.2015.2418836",

language = "English",

volume = "62",

pages = "1607--1616",

journal = "IEEE Transactions on Circuits and Systems I: Regular Papers",

issn = "1549-8328",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

number = "6",

}

TY - JOUR

T1 - Dynamic behavior of coupled memristor circuits

AU - Yu, D.

AU - Iu, Ho Ching

AU - Liang, Y.

AU - Fernando, Tyrone

AU - Chua, L.O.

PY - 2015

Y1 - 2015

N2 - © 2004-2012 IEEE. This paper reports on the dynamic behavior of dual coupled memristors (MRs) in serial and parallel connections in consideration of polarity combination and coupling strength. Based on the constitutive relations, two flux coupled MRs are adopted for demonstration to theoretically exhibit the variation of memductance in terms of flux, charge, voltage, and current. The coupled MRs are also serially connected with a regular resistor to further explore its memristive behavior. Theoretical analysis reported in this paper is confirmed via a simulation study, and then an experimental investigation is carried out using a practical circuit emulating the dual coupled MRs. Good agreement between experimental and simulation results confirms that dual coupled MRs in composite connections behave as a new MR with higher complexity.

AB - © 2004-2012 IEEE. This paper reports on the dynamic behavior of dual coupled memristors (MRs) in serial and parallel connections in consideration of polarity combination and coupling strength. Based on the constitutive relations, two flux coupled MRs are adopted for demonstration to theoretically exhibit the variation of memductance in terms of flux, charge, voltage, and current. The coupled MRs are also serially connected with a regular resistor to further explore its memristive behavior. Theoretical analysis reported in this paper is confirmed via a simulation study, and then an experimental investigation is carried out using a practical circuit emulating the dual coupled MRs. Good agreement between experimental and simulation results confirms that dual coupled MRs in composite connections behave as a new MR with higher complexity.

U2 - 10.1109/TCSI.2015.2418836

DO - 10.1109/TCSI.2015.2418836

M3 - Article

SN - 1549-8328

VL - 62

SP - 1607

EP - 1616

JO - IEEE Transactions on Circuits and Systems I: Regular Papers

JF - IEEE Transactions on Circuits and Systems I: Regular Papers

IS - 6

ER -

Dynamic behavior of coupled memristor circuits

Abstract

Access to Document

Fingerprint

Cite this