TY - JOUR
T1 - Drain Breakdown Voltage in MuGFETs
T2 - Influence of Physical Parameters
AU - Lee, Chi-Woo
AU - Afzalian, Aryan
AU - Yan, Ran
AU - Akhavan, Nima Dehdashti
AU - Xiong, Weize
AU - Colinge, Jean-Pierre
PY - 2008/12
Y1 - 2008/12
N2 - This paper analyzes the drain breakdown voltage of multigate MOSFETs and the influence of parameters such as doping concentration, fin width, and gate length. The good electrostatic control of the active area by the multigate structure improves the drain breakdown voltage, which increases as the fin width is decreased. Increasing the channel doping concentration improves the drain breakdown voltage as well.
AB - This paper analyzes the drain breakdown voltage of multigate MOSFETs and the influence of parameters such as doping concentration, fin width, and gate length. The good electrostatic control of the active area by the multigate structure improves the drain breakdown voltage, which increases as the fin width is decreased. Increasing the channel doping concentration improves the drain breakdown voltage as well.
KW - Breakdown voltage
KW - floating-body effects
KW - impact ionization
KW - multiple-gate MOSFET (MuGFET)
KW - silicon-on-insulator (SOT)
KW - DESIGN
U2 - 10.1109/TED.2008.2006546
DO - 10.1109/TED.2008.2006546
M3 - Article
SN - 0018-9383
VL - 55
SP - 3503
EP - 3506
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 12
ER -