Drain Breakdown Voltage in MuGFETs: Influence of Physical Parameters

Chi-Woo Lee, Aryan Afzalian, Ran Yan, Nima Dehdashti Akhavan, Weize Xiong, Jean-Pierre Colinge

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


This paper analyzes the drain breakdown voltage of multigate MOSFETs and the influence of parameters such as doping concentration, fin width, and gate length. The good electrostatic control of the active area by the multigate structure improves the drain breakdown voltage, which increases as the fin width is decreased. Increasing the channel doping concentration improves the drain breakdown voltage as well.

Original languageEnglish
Pages (from-to)3503-3506
Number of pages4
JournalIEEE Transactions on Electron Devices
Issue number12
Publication statusPublished - Dec 2008


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