Dissipative Transport in Multigate Silicon nanowire Transistors

Nima Dehdashti, Abhinav Kranti, Isabelle Ferain, Chi-Woo Lee, Ran Yan, Pedram Razavi, Ran Yu, Jean-Pierre Colinge

Research output: Chapter in Book/Conference paperConference paper

4 Citations (Scopus)

Abstract

Most device simulation packages performing quantum transport modeling in thin body Multigate silicon nanowire devices at nanometer scales neglect the electron-phonon interaction, assuming devices operate in the ballistic regime. Here we perform a detailed study on dissipative quantum transport in multigate silicon nanowire transistor including acoustic and optical phonons in detail using non-equilibrium Green's function formalism in uncoupled mode-space approach. We find out that g-type phonons are the most important mechanisms contributing to current reduction in multigate nanowire both in subthreshold and above threshold region for silicon nanowire with 5nm film thickness. This crucial rule of g-type phonons stay active even for gate lengths below 20nm, which implies that ballistic models are inadequate to capture the device characteristics of nanometre devices.

Original languageEnglish
Title of host publicationSISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES
EditorsG Baccarani, M Rudan
PublisherWiley-IEEE Press
Pages97-100
Number of pages4
ISBN (Print)978-1-4244-7701-2
DOIs
Publication statusPublished - 2010
Event15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy
Duration: 6 Sep 20108 Sep 2010

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices
PublisherIEEE
ISSN (Print)1946-1569

Conference

Conference15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010)
CountryItaly
CityBologna
Period6/09/108/09/10

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