Dissipative Transport in Multigate Silicon nanowire Transistors

Nima Dehdashti; Abhinav Kranti; Isabelle Ferain; Chi-Woo Lee; Ran Yan; Pedram Razavi; Ran Yu; Jean-Pierre Colinge

doi:10.1109/SISPAD.2010.5604559

Dissipative Transport in Multigate Silicon nanowire Transistors

Nima Dehdashti, Abhinav Kranti, Isabelle Ferain, Chi-Woo Lee, Ran Yan, Pedram Razavi, Ran Yu, Jean-Pierre Colinge

School of Engineering

Research output: Chapter in Book/Conference paper › Conference paper

4 Citations (Scopus)

Abstract

Most device simulation packages performing quantum transport modeling in thin body Multigate silicon nanowire devices at nanometer scales neglect the electron-phonon interaction, assuming devices operate in the ballistic regime. Here we perform a detailed study on dissipative quantum transport in multigate silicon nanowire transistor including acoustic and optical phonons in detail using non-equilibrium Green's function formalism in uncoupled mode-space approach. We find out that g-type phonons are the most important mechanisms contributing to current reduction in multigate nanowire both in subthreshold and above threshold region for silicon nanowire with 5nm film thickness. This crucial rule of g-type phonons stay active even for gate lengths below 20nm, which implies that ballistic models are inadequate to capture the device characteristics of nanometre devices.

Original language	English
Title of host publication	SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES
Editors	G Baccarani, M Rudan
Publisher	Wiley-IEEE Press
Pages	97-100
Number of pages	4
ISBN (Print)	978-1-4244-7701-2
DOIs	https://doi.org/10.1109/SISPAD.2010.5604559
Publication status	Published - 2010
Event	15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy Duration: 6 Sep 2010 → 8 Sep 2010

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices
Publisher	IEEE
ISSN (Print)	1946-1569

Conference

Conference	15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010)
Country	Italy
City	Bologna
Period	6/09/10 → 8/09/10

Access to Document

10.1109/SISPAD.2010.5604559

Cite this

Dehdashti, N., Kranti, A., Ferain, I., Lee, C-W., Yan, R., Razavi, P., Yu, R., & Colinge, J-P. (2010). Dissipative Transport in Multigate Silicon nanowire Transistors. In G. Baccarani, & M. Rudan (Eds.), SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (pp. 97-100). (International Conference on Simulation of Semiconductor Processes and Devices). Wiley-IEEE Press. https://doi.org/10.1109/SISPAD.2010.5604559

Dehdashti, Nima ; Kranti, Abhinav ; Ferain, Isabelle ; Lee, Chi-Woo ; Yan, Ran ; Razavi, Pedram ; Yu, Ran ; Colinge, Jean-Pierre. / Dissipative Transport in Multigate Silicon nanowire Transistors. SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES. editor / G Baccarani ; M Rudan. Wiley-IEEE Press, 2010. pp. 97-100 (International Conference on Simulation of Semiconductor Processes and Devices).

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title = "Dissipative Transport in Multigate Silicon nanowire Transistors",

abstract = "Most device simulation packages performing quantum transport modeling in thin body Multigate silicon nanowire devices at nanometer scales neglect the electron-phonon interaction, assuming devices operate in the ballistic regime. Here we perform a detailed study on dissipative quantum transport in multigate silicon nanowire transistor including acoustic and optical phonons in detail using non-equilibrium Green's function formalism in uncoupled mode-space approach. We find out that g-type phonons are the most important mechanisms contributing to current reduction in multigate nanowire both in subthreshold and above threshold region for silicon nanowire with 5nm film thickness. This crucial rule of g-type phonons stay active even for gate lengths below 20nm, which implies that ballistic models are inadequate to capture the device characteristics of nanometre devices.",

keywords = "dissipative quantum transport, optical phonons, acoustic phonons, non-equilibrium Green's function, single band effective mass, CARBON-NANOTUBE TRANSISTORS, SCATTERING",

author = "Nima Dehdashti and Abhinav Kranti and Isabelle Ferain and Chi-Woo Lee and Ran Yan and Pedram Razavi and Ran Yu and Jean-Pierre Colinge",

year = "2010",

doi = "10.1109/SISPAD.2010.5604559",

language = "English",

isbn = "978-1-4244-7701-2",

series = "International Conference on Simulation of Semiconductor Processes and Devices",

publisher = "Wiley-IEEE Press",

pages = "97--100",

editor = "G Baccarani and M Rudan",

booktitle = "SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES",

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Dehdashti, N, Kranti, A, Ferain, I, Lee, C-W, Yan, R, Razavi, P, Yu, R & Colinge, J-P 2010, Dissipative Transport in Multigate Silicon nanowire Transistors. in G Baccarani & M Rudan (eds), SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES. International Conference on Simulation of Semiconductor Processes and Devices, Wiley-IEEE Press, pp. 97-100, 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010), Bologna, Italy, 6/09/10. https://doi.org/10.1109/SISPAD.2010.5604559

Dissipative Transport in Multigate Silicon nanowire Transistors. / Dehdashti, Nima; Kranti, Abhinav; Ferain, Isabelle; Lee, Chi-Woo; Yan, Ran; Razavi, Pedram; Yu, Ran; Colinge, Jean-Pierre.

SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES. ed. / G Baccarani; M Rudan. Wiley-IEEE Press, 2010. p. 97-100 (International Conference on Simulation of Semiconductor Processes and Devices).

Research output: Chapter in Book/Conference paper › Conference paper

TY - GEN

T1 - Dissipative Transport in Multigate Silicon nanowire Transistors

AU - Dehdashti, Nima

AU - Kranti, Abhinav

AU - Ferain, Isabelle

AU - Lee, Chi-Woo

AU - Yan, Ran

AU - Razavi, Pedram

AU - Yu, Ran

AU - Colinge, Jean-Pierre

PY - 2010

Y1 - 2010

N2 - Most device simulation packages performing quantum transport modeling in thin body Multigate silicon nanowire devices at nanometer scales neglect the electron-phonon interaction, assuming devices operate in the ballistic regime. Here we perform a detailed study on dissipative quantum transport in multigate silicon nanowire transistor including acoustic and optical phonons in detail using non-equilibrium Green's function formalism in uncoupled mode-space approach. We find out that g-type phonons are the most important mechanisms contributing to current reduction in multigate nanowire both in subthreshold and above threshold region for silicon nanowire with 5nm film thickness. This crucial rule of g-type phonons stay active even for gate lengths below 20nm, which implies that ballistic models are inadequate to capture the device characteristics of nanometre devices.

AB - Most device simulation packages performing quantum transport modeling in thin body Multigate silicon nanowire devices at nanometer scales neglect the electron-phonon interaction, assuming devices operate in the ballistic regime. Here we perform a detailed study on dissipative quantum transport in multigate silicon nanowire transistor including acoustic and optical phonons in detail using non-equilibrium Green's function formalism in uncoupled mode-space approach. We find out that g-type phonons are the most important mechanisms contributing to current reduction in multigate nanowire both in subthreshold and above threshold region for silicon nanowire with 5nm film thickness. This crucial rule of g-type phonons stay active even for gate lengths below 20nm, which implies that ballistic models are inadequate to capture the device characteristics of nanometre devices.

KW - dissipative quantum transport

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KW - acoustic phonons

KW - non-equilibrium Green's function

KW - single band effective mass

KW - CARBON-NANOTUBE TRANSISTORS

KW - SCATTERING

U2 - 10.1109/SISPAD.2010.5604559

DO - 10.1109/SISPAD.2010.5604559

M3 - Conference paper

SN - 978-1-4244-7701-2

T3 - International Conference on Simulation of Semiconductor Processes and Devices

SP - 97

EP - 100

BT - SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES

A2 - Baccarani, G

A2 - Rudan, M

PB - Wiley-IEEE Press

T2 - 15th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010)

Y2 - 6 September 2010 through 8 September 2010

ER -

Dehdashti N, Kranti A, Ferain I, Lee C-W, Yan R, Razavi P et al. Dissipative Transport in Multigate Silicon nanowire Transistors. In Baccarani G, Rudan M, editors, SISPAD 2010 - 15TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES. Wiley-IEEE Press. 2010. p. 97-100. (International Conference on Simulation of Semiconductor Processes and Devices). https://doi.org/10.1109/SISPAD.2010.5604559