Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors

R. Vetury, Y. F. Wu, P. T. Fini, G. Parish, S. Keller, S. P. DenBaars, U. K. Mishra

Research output: Contribution to journal › Conference article › peer-review

18 Citations (Scopus)

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