Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors

R. Vetury; Y. F. Wu; P. T. Fini; G. Parish; S. Keller; S. P. DenBaars; U. K. Mishra

Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors

R. Vetury, Y. F. Wu, P. T. Fini, G. Parish, S. Keller, S. P. DenBaars, U. K. Mishra

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new measurement technique that directly reveals the extent of the gate depletion region in FETs by using floating Schottky gates as potential probes is presented. Measurements on GaN heterojunction field heterojunction field effect transistors (HFETs) show that large extension of the depletion width is responsible for the high dc breakdown voltages in these HFETs.

Original language	English
Pages (from-to)	55-58
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 1 Dec 1998
Externally published	Yes
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 6 Dec 1998 → 9 Dec 1998

Cite this

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title = "Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors",

abstract = "A new measurement technique that directly reveals the extent of the gate depletion region in FETs by using floating Schottky gates as potential probes is presented. Measurements on GaN heterojunction field heterojunction field effect transistors (HFETs) show that large extension of the depletion width is responsible for the high dc breakdown voltages in these HFETs.",

author = "R. Vetury and Wu, {Y. F.} and Fini, {P. T.} and G. Parish and S. Keller and DenBaars, {S. P.} and Mishra, {U. K.}",

year = "1998",

month = dec,

day = "1",

language = "English",

pages = "55--58",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

}

TY - JOUR

T1 - Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors

AU - Vetury, R.

AU - Wu, Y. F.

AU - Fini, P. T.

AU - Parish, G.

AU - Keller, S.

AU - DenBaars, S. P.

AU - Mishra, U. K.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - A new measurement technique that directly reveals the extent of the gate depletion region in FETs by using floating Schottky gates as potential probes is presented. Measurements on GaN heterojunction field heterojunction field effect transistors (HFETs) show that large extension of the depletion width is responsible for the high dc breakdown voltages in these HFETs.

AB - A new measurement technique that directly reveals the extent of the gate depletion region in FETs by using floating Schottky gates as potential probes is presented. Measurements on GaN heterojunction field heterojunction field effect transistors (HFETs) show that large extension of the depletion width is responsible for the high dc breakdown voltages in these HFETs.

UR - http://www.scopus.com/inward/record.url?scp=0032256580&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032256580

SN - 0163-1918

SP - 55

EP - 58

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors

Abstract

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