Direct measurement of gate depletion in high breakdown (405 V) AlGaN/GaN heterostructure field effect transistors

R. Vetury, Y. F. Wu, P. T. Fini, G. Parish, S. Keller, S. P. DenBaars, U. K. Mishra

Research output: Contribution to journalConference article

13 Citations (Scopus)


A new measurement technique that directly reveals the extent of the gate depletion region in FETs by using floating Schottky gates as potential probes is presented. Measurements on GaN heterojunction field heterojunction field effect transistors (HFETs) show that large extension of the depletion width is responsible for the high dc breakdown voltages in these HFETs.

Original languageEnglish
Pages (from-to)55-58
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1 Dec 1998
Externally publishedYes
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 6 Dec 19989 Dec 1998


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