Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 733-738 |
| Journal | Microelectronics Reliability |
| Volume | 47 |
| Issue number | 4-5 |
| DOIs | |
| Publication status | Published - 2007 |
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Dielectric thin films for MEMS-based optical sensors. / Martyniuk, Mariusz; Antoszewski, Jarek; Musca, Charles; Dell, John; Faraone, Lorenzo.
In: Microelectronics Reliability, Vol. 47, No. 4-5, 2007, p. 733-738.Research output: Contribution to journal › Article
TY - JOUR
T1 - Dielectric thin films for MEMS-based optical sensors
AU - Martyniuk, Mariusz
AU - Antoszewski, Jarek
AU - Musca, Charles
AU - Dell, John
AU - Faraone, Lorenzo
PY - 2007
Y1 - 2007
N2 - Nanoindentation and optical measurements have been employed in order to investigate the mechanical properties of low-temperature (50-330 degrees C) plasma-enhanced chemical vapour deposited (PECVD) SiNx as well as thermally evaporated SiOx, and Ge thin films for applications in micro-electro-mechanical systems (MEMS) fabricated on temperature sensitive, non-standard substrates. The temperature of the SiN, deposition process is found to strongly influence Young's modulus, hardness, and stress, with a critical deposition temperature in the 100 degrees C to 150 degrees C range which depends on the details of other deposition conditions such as chamber pressure and RF-power. The properties of PECVD SiN, films deposited above this critical temperature are found to be suitable for MEMS applications, whereas films deposited at lower temperatures exhibit low Young's modulus and hardness, as well as environment-induced stress instabilities. The investigated thin films have been incorporated into a monolithic integrated technology comprising low-temperature (-125 degrees C) MEMS and HgCdTe IR detectors, in order to realize successful prototypes of tuneable IR microspectrometers. (C) 2007 Elsevier Ltd. All rights reserved.
AB - Nanoindentation and optical measurements have been employed in order to investigate the mechanical properties of low-temperature (50-330 degrees C) plasma-enhanced chemical vapour deposited (PECVD) SiNx as well as thermally evaporated SiOx, and Ge thin films for applications in micro-electro-mechanical systems (MEMS) fabricated on temperature sensitive, non-standard substrates. The temperature of the SiN, deposition process is found to strongly influence Young's modulus, hardness, and stress, with a critical deposition temperature in the 100 degrees C to 150 degrees C range which depends on the details of other deposition conditions such as chamber pressure and RF-power. The properties of PECVD SiN, films deposited above this critical temperature are found to be suitable for MEMS applications, whereas films deposited at lower temperatures exhibit low Young's modulus and hardness, as well as environment-induced stress instabilities. The investigated thin films have been incorporated into a monolithic integrated technology comprising low-temperature (-125 degrees C) MEMS and HgCdTe IR detectors, in order to realize successful prototypes of tuneable IR microspectrometers. (C) 2007 Elsevier Ltd. All rights reserved.
U2 - 10.1016/j.microrel.2007.01.060
DO - 10.1016/j.microrel.2007.01.060
M3 - Article
VL - 47
SP - 733
EP - 738
JO - Microelectronics Reliability
JF - Microelectronics Reliability
SN - 0026-2714
IS - 4-5
ER -