Dielectric thin films for MEMS-based optical sensors

Research output: Contribution to journalArticle

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Abstract

Nanoindentation and optical measurements have been employed in order to investigate the mechanical properties of low-temperature (50-330 degrees C) plasma-enhanced chemical vapour deposited (PECVD) SiNx as well as thermally evaporated SiOx, and Ge thin films for applications in micro-electro-mechanical systems (MEMS) fabricated on temperature sensitive, non-standard substrates. The temperature of the SiN, deposition process is found to strongly influence Young's modulus, hardness, and stress, with a critical deposition temperature in the 100 degrees C to 150 degrees C range which depends on the details of other deposition conditions such as chamber pressure and RF-power. The properties of PECVD SiN, films deposited above this critical temperature are found to be suitable for MEMS applications, whereas films deposited at lower temperatures exhibit low Young's modulus and hardness, as well as environment-induced stress instabilities. The investigated thin films have been incorporated into a monolithic integrated technology comprising low-temperature (-125 degrees C) MEMS and HgCdTe IR detectors, in order to realize successful prototypes of tuneable IR microspectrometers. (C) 2007 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)733-738
JournalMicroelectronics Reliability
Volume47
Issue number4-5
DOIs
Publication statusPublished - 2007

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Dielectric films
Optical sensors
optical measuring instruments
Thin films
modulus of elasticity
hardness
thin films
vapors
pressure chambers
nanoindentation
optical measurement
Temperature
temperature
critical temperature
prototypes
mechanical properties
Elastic moduli
Hardness
Vapors
Plasmas

Cite this

@article{50c5a1b2dc33488b82f2df060a6d348e,
title = "Dielectric thin films for MEMS-based optical sensors",
abstract = "Nanoindentation and optical measurements have been employed in order to investigate the mechanical properties of low-temperature (50-330 degrees C) plasma-enhanced chemical vapour deposited (PECVD) SiNx as well as thermally evaporated SiOx, and Ge thin films for applications in micro-electro-mechanical systems (MEMS) fabricated on temperature sensitive, non-standard substrates. The temperature of the SiN, deposition process is found to strongly influence Young's modulus, hardness, and stress, with a critical deposition temperature in the 100 degrees C to 150 degrees C range which depends on the details of other deposition conditions such as chamber pressure and RF-power. The properties of PECVD SiN, films deposited above this critical temperature are found to be suitable for MEMS applications, whereas films deposited at lower temperatures exhibit low Young's modulus and hardness, as well as environment-induced stress instabilities. The investigated thin films have been incorporated into a monolithic integrated technology comprising low-temperature (-125 degrees C) MEMS and HgCdTe IR detectors, in order to realize successful prototypes of tuneable IR microspectrometers. (C) 2007 Elsevier Ltd. All rights reserved.",
author = "Mariusz Martyniuk and Jarek Antoszewski and Charles Musca and John Dell and Lorenzo Faraone",
year = "2007",
doi = "10.1016/j.microrel.2007.01.060",
language = "English",
volume = "47",
pages = "733--738",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Pergamon",
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}

Dielectric thin films for MEMS-based optical sensors. / Martyniuk, Mariusz; Antoszewski, Jarek; Musca, Charles; Dell, John; Faraone, Lorenzo.

In: Microelectronics Reliability, Vol. 47, No. 4-5, 2007, p. 733-738.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Dielectric thin films for MEMS-based optical sensors

AU - Martyniuk, Mariusz

AU - Antoszewski, Jarek

AU - Musca, Charles

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2007

Y1 - 2007

N2 - Nanoindentation and optical measurements have been employed in order to investigate the mechanical properties of low-temperature (50-330 degrees C) plasma-enhanced chemical vapour deposited (PECVD) SiNx as well as thermally evaporated SiOx, and Ge thin films for applications in micro-electro-mechanical systems (MEMS) fabricated on temperature sensitive, non-standard substrates. The temperature of the SiN, deposition process is found to strongly influence Young's modulus, hardness, and stress, with a critical deposition temperature in the 100 degrees C to 150 degrees C range which depends on the details of other deposition conditions such as chamber pressure and RF-power. The properties of PECVD SiN, films deposited above this critical temperature are found to be suitable for MEMS applications, whereas films deposited at lower temperatures exhibit low Young's modulus and hardness, as well as environment-induced stress instabilities. The investigated thin films have been incorporated into a monolithic integrated technology comprising low-temperature (-125 degrees C) MEMS and HgCdTe IR detectors, in order to realize successful prototypes of tuneable IR microspectrometers. (C) 2007 Elsevier Ltd. All rights reserved.

AB - Nanoindentation and optical measurements have been employed in order to investigate the mechanical properties of low-temperature (50-330 degrees C) plasma-enhanced chemical vapour deposited (PECVD) SiNx as well as thermally evaporated SiOx, and Ge thin films for applications in micro-electro-mechanical systems (MEMS) fabricated on temperature sensitive, non-standard substrates. The temperature of the SiN, deposition process is found to strongly influence Young's modulus, hardness, and stress, with a critical deposition temperature in the 100 degrees C to 150 degrees C range which depends on the details of other deposition conditions such as chamber pressure and RF-power. The properties of PECVD SiN, films deposited above this critical temperature are found to be suitable for MEMS applications, whereas films deposited at lower temperatures exhibit low Young's modulus and hardness, as well as environment-induced stress instabilities. The investigated thin films have been incorporated into a monolithic integrated technology comprising low-temperature (-125 degrees C) MEMS and HgCdTe IR detectors, in order to realize successful prototypes of tuneable IR microspectrometers. (C) 2007 Elsevier Ltd. All rights reserved.

U2 - 10.1016/j.microrel.2007.01.060

DO - 10.1016/j.microrel.2007.01.060

M3 - Article

VL - 47

SP - 733

EP - 738

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 4-5

ER -