Device characteristics of Trigate-FET with barrier constrictions in the channel

Nima Dehdashti; A. Afzalian; C. -W Lee; R. Yan; G. Fagas; J. -P Colinge

Device characteristics of Trigate-FET with barrier constrictions in the channel

Nima Dehdashti, A. Afzalian, C. -W Lee, R. Yan, G. Fagas, J. -P Colinge

School of Engineering

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

1 Citation (Web of Science)

Abstract

We have investigated the effect of symmetric geometrical constrictions on the device characteristics of ultrathin silicon-on-insulator (SOI) nanowire with Trigate structure by means of the full real-space three dimensional Nonequilibrium Greens's Function (NEGF) method. In this study, geometrical constrictions are introduced as energy barriers near the source and the drain junctions and their strength is modulated by the potential height and the geometry. Interestingly, even at room temperature the drain current in the device shows oscillations as a function of the applied gate voltage. This can be traced to the development of transmission resonances as the channel is additionally confined along the current direction.

Original language	English
Title of host publication	IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS
Publisher	Wiley-IEEE Press
Pages	246-249
Number of pages	4
ISBN (Print)	978-1-4244-3925-6
Publication status	Published - 2009
Event	13th International Workshop on Computational Electronics - Beijing Duration: 27 May 2009 → 29 May 2009

Conference

Conference	13th International Workshop on Computational Electronics
City	Beijing
Period	27/05/09 → 29/05/09

Cite this

@inproceedings{3fdccf7246f044d9a9293bee0c093a07,

title = "Device characteristics of Trigate-FET with barrier constrictions in the channel",

abstract = "We have investigated the effect of symmetric geometrical constrictions on the device characteristics of ultrathin silicon-on-insulator (SOI) nanowire with Trigate structure by means of the full real-space three dimensional Nonequilibrium Greens's Function (NEGF) method. In this study, geometrical constrictions are introduced as energy barriers near the source and the drain junctions and their strength is modulated by the potential height and the geometry. Interestingly, even at room temperature the drain current in the device shows oscillations as a function of the applied gate voltage. This can be traced to the development of transmission resonances as the channel is additionally confined along the current direction.",

keywords = "SILICON NANOWIRE TRANSISTORS, EFFECTIVE-MASS APPROXIMATION, SINGLE-ELECTRON, QUANTUM TRANSPORT, SIMULATION, REAL",

author = "Nima Dehdashti and A. Afzalian and Lee, {C. -W} and R. Yan and G. Fagas and Colinge, {J. -P}",

year = "2009",

language = "English",

isbn = "978-1-4244-3925-6",

pages = "246--249",

booktitle = "IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS",

publisher = "Wiley-IEEE Press",

note = "13th International Workshop on Computational Electronics ; Conference date: 27-05-2009 Through 29-05-2009",

}

TY - GEN

T1 - Device characteristics of Trigate-FET with barrier constrictions in the channel

AU - Dehdashti, Nima

AU - Afzalian, A.

AU - Lee, C. -W

AU - Yan, R.

AU - Fagas, G.

AU - Colinge, J. -P

PY - 2009

Y1 - 2009

N2 - We have investigated the effect of symmetric geometrical constrictions on the device characteristics of ultrathin silicon-on-insulator (SOI) nanowire with Trigate structure by means of the full real-space three dimensional Nonequilibrium Greens's Function (NEGF) method. In this study, geometrical constrictions are introduced as energy barriers near the source and the drain junctions and their strength is modulated by the potential height and the geometry. Interestingly, even at room temperature the drain current in the device shows oscillations as a function of the applied gate voltage. This can be traced to the development of transmission resonances as the channel is additionally confined along the current direction.

AB - We have investigated the effect of symmetric geometrical constrictions on the device characteristics of ultrathin silicon-on-insulator (SOI) nanowire with Trigate structure by means of the full real-space three dimensional Nonequilibrium Greens's Function (NEGF) method. In this study, geometrical constrictions are introduced as energy barriers near the source and the drain junctions and their strength is modulated by the potential height and the geometry. Interestingly, even at room temperature the drain current in the device shows oscillations as a function of the applied gate voltage. This can be traced to the development of transmission resonances as the channel is additionally confined along the current direction.

KW - SILICON NANOWIRE TRANSISTORS

KW - EFFECTIVE-MASS APPROXIMATION

KW - SINGLE-ELECTRON

KW - QUANTUM TRANSPORT

KW - SIMULATION

KW - REAL

M3 - Conference paper

SN - 978-1-4244-3925-6

SP - 246

EP - 249

BT - IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS

PB - Wiley-IEEE Press

T2 - 13th International Workshop on Computational Electronics

Y2 - 27 May 2009 through 29 May 2009

ER -

Device characteristics of Trigate-FET with barrier constrictions in the channel

Abstract

Conference

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