Device characteristics of Trigate-FET with barrier constrictions in the channel

Nima Dehdashti, A. Afzalian, C. -W Lee, R. Yan, G. Fagas, J. -P Colinge

Research output: Chapter in Book/Conference paperConference paper

3 Citations (Scopus)

Abstract

We have investigated the effect of symmetric geometrical constrictions on the device characteristics of ultrathin silicon-on-insulator (SOI) nanowire with Trigate structure by means of the full real-space three dimensional Nonequilibrium Greens's Function (NEGF) method. In this study, geometrical constrictions are introduced as energy barriers near the source and the drain junctions and their strength is modulated by the potential height and the geometry. Interestingly, even at room temperature the drain current in the device shows oscillations as a function of the applied gate voltage. This can be traced to the development of transmission resonances as the channel is additionally confined along the current direction.

Original languageEnglish
Title of host publicationIWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS
PublisherWiley-IEEE Press
Pages246-249
Number of pages4
ISBN (Print)978-1-4244-3925-6
Publication statusPublished - 2009
Event13th International Workshop on Computational Electronics - Beijing
Duration: 27 May 200929 May 2009

Conference

Conference13th International Workshop on Computational Electronics
CityBeijing
Period27/05/0929/05/09

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