Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures

D. Mouneyrac, John Hartnett, Jean-Michel Le Floch, Michael Tobar, D. Cros, J. Krupka

    Research output: Contribution to journalArticle

    4 Citations (Scopus)
    Original languageEnglish
    Pages (from-to)Article number 104107, 6pp
    JournalJournal of Applied Physics
    Volume108
    Issue number10
    DOIs
    Publication statusPublished - 2010

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