Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures

D. Mouneyrac; John Hartnett; Jean-Michel Le Floch; Michael Tobar; D. Cros; J. Krupka

doi:10.1063/1.3514009

Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures

D. Mouneyrac, John Hartnett, Jean-Michel Le Floch, Michael Tobar, D. Cros, J. Krupka

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	Article number 104107, 6pp
Journal	Journal of Applied Physics
Volume	108
Issue number	10
DOIs	https://doi.org/10.1063/1.3514009
Publication status	Published - 2010

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10.1063/1.3514009

Cite this

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title = "Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures",

author = "D. Mouneyrac and John Hartnett and {Le Floch}, Jean-Michel and Michael Tobar and D. Cros and J. Krupka",

year = "2010",

doi = "10.1063/1.3514009",

language = "English",

volume = "108",

pages = "Article number 104107, 6pp",

journal = "J. Applied Physics",

issn = "0021-8979",

publisher = "ACOUSTICAL SOC AMER AMER INST PHYSICS",

number = "10",

}

Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures. / Mouneyrac, D.; Hartnett, John; Le Floch, Jean-Michel ; Tobar, Michael; Cros, D.; Krupka, J.

In: Journal of Applied Physics, Vol. 108, No. 10, 2010, p. Article number 104107, 6pp.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H-SiC semiconductors under light illumination at cryogenic temperatures

AU - Mouneyrac, D.

AU - Hartnett, John

AU - Le Floch, Jean-Michel

AU - Tobar, Michael

AU - Cros, D.

AU - Krupka, J.

PY - 2010

Y1 - 2010

U2 - 10.1063/1.3514009

DO - 10.1063/1.3514009

M3 - Article

VL - 108

SP - Article number 104107, 6pp

JO - J. Applied Physics

JF - J. Applied Physics

SN - 0021-8979

IS - 10

ER -