Projects per year
Abstract
In this paper, we study the limiting mechanisms and design criteria of HgCdTe photodetectors for extended shortwave infrared applications with ultra-high quantum efficiency (QE) in both n-on-p and p-on-n technologies. Numerical and analytical models are employed in order to study the possibility of achieving ultra-high QE eSWIR detectors for the operational wavelengths of approximately 2.0 μm, and our study shows that by proper design of absorber layer and doping density, such a detector can be engineered. Furthermore, we demonstrate that the Shockley–Read–Hall (SRH) lifetime, absorber layer doping density and absorber layer thickness all have an impact on the quantum efficiency whether the detector is used as a small-area pixel element in a focal plane array or as a discrete large-area detector for sensing applications.
Original language | English |
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Pages (from-to) | 4742-4751 |
Number of pages | 10 |
Journal | Journal of Electronic Materials |
Volume | 51 |
Issue number | 9 |
DOIs | |
Publication status | Published - Sept 2022 |
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ARC Centre of Excellence for Transformative Meta-Optical Systems
Martyniuk, M. (Investigator 01) & Faraone, L. (Investigator 02)
ARC Australian Research Council
1/01/21 → 31/12/28
Project: Research
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Fundamental electronic transport in emerging 1D nanoelectronic devices
Faraone, L. (Investigator 01), Umana Membreno, G. A. (Investigator 02) & Cristoloveanu, S. (Investigator 03)
ARC Australian Research Council
1/01/17 → 31/12/19
Project: Research