Design of band engineered HgCdTe nBn detectors for MWIR and LWIR applications

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

© 2015 IEEE. In this paper, we present a theoretical study of mercury cadmium telluride (HgCdTe)-based unipolar n-type/barrier/n-type (nBn) infrared (IR) detector structures for midwave IR and longwave IR spectral bands. To achieve the ultimate performance of nBn detectors, a bandgap engineering method is proposed to remove the undesirable valence band discontinuity that is currently limiting the performance of conventional HgCdTe nBn detectors. Our proposed band engineering method relies on simultaneous grading of the barrier composition and doping density profiles, leading to efficient elimination of the valence band discontinuity. This allows the detector to operate at Vbias|
Original languageEnglish
Pages (from-to)722-728
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume62
Issue number3
Early online date29 Jan 2015
DOIs
Publication statusPublished - Mar 2015

Fingerprint

Dive into the research topics of 'Design of band engineered HgCdTe nBn detectors for MWIR and LWIR applications'. Together they form a unique fingerprint.

Cite this