Description of ionophore-doped membranes with a blocked interface

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Abstract

Ion sensors with blocked interfaces, such as coated-wire electrodes (CWEs) and ion-selective field effect transistors (ISFETs), are increasingly being used as alternatives to traditional ion-selective electrodes (ISEs). This work provides insights into the behaviour of ionophore-doped membranes in solution, where one side completely blocks ion transfer, using the Nernst-Planck-Poisson (NPP) model, including reaction terms. Extensive investigations were conducted, demonstrating that the NPP model provides reasonable predictions, as well as insight into the interplay between interfacial kinetics, complexation, diffusion and electrical processes. Model validation is achieved through its application to and analysis of experimental results obtained for AlGaN/GaN ISFETs with ionophore-doped membranes.

Original languageEnglish
Pages (from-to)499-508
Number of pages10
JournalSensors and Actuators, B: Chemical
Volume250
DOIs
Publication statusPublished - 1 Oct 2017

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Ionophores
Ions
membranes
Membranes
Field effect transistors
Coated wire electrodes
ions
field effect transistors
ion selective electrodes
Complexation
wire
Kinetics
electrodes
sensors
Sensors
kinetics
predictions

Cite this

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title = "Description of ionophore-doped membranes with a blocked interface",
abstract = "Ion sensors with blocked interfaces, such as coated-wire electrodes (CWEs) and ion-selective field effect transistors (ISFETs), are increasingly being used as alternatives to traditional ion-selective electrodes (ISEs). This work provides insights into the behaviour of ionophore-doped membranes in solution, where one side completely blocks ion transfer, using the Nernst-Planck-Poisson (NPP) model, including reaction terms. Extensive investigations were conducted, demonstrating that the NPP model provides reasonable predictions, as well as insight into the interplay between interfacial kinetics, complexation, diffusion and electrical processes. Model validation is achieved through its application to and analysis of experimental results obtained for AlGaN/GaN ISFETs with ionophore-doped membranes.",
keywords = "Electro-diffusion, Ionophore, Membranes, Nernst-Planck-Poisson",
author = "Sanders, {Tarun Maruthi} and Matthew Myers and Asadnia, {Mohsen Jahromi} and Umana-Membreno, {Gilberto Antonio} and Baker, {Murray Vincent} and Fowkes, {Neville Donald} and Giacinta Parish and Nener, {Brett Douglas}",
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TY - JOUR

T1 - Description of ionophore-doped membranes with a blocked interface

AU - Sanders, Tarun Maruthi

AU - Myers, Matthew

AU - Asadnia, Mohsen Jahromi

AU - Umana-Membreno, Gilberto Antonio

AU - Baker, Murray Vincent

AU - Fowkes, Neville Donald

AU - Parish, Giacinta

AU - Nener, Brett Douglas

PY - 2017/10/1

Y1 - 2017/10/1

N2 - Ion sensors with blocked interfaces, such as coated-wire electrodes (CWEs) and ion-selective field effect transistors (ISFETs), are increasingly being used as alternatives to traditional ion-selective electrodes (ISEs). This work provides insights into the behaviour of ionophore-doped membranes in solution, where one side completely blocks ion transfer, using the Nernst-Planck-Poisson (NPP) model, including reaction terms. Extensive investigations were conducted, demonstrating that the NPP model provides reasonable predictions, as well as insight into the interplay between interfacial kinetics, complexation, diffusion and electrical processes. Model validation is achieved through its application to and analysis of experimental results obtained for AlGaN/GaN ISFETs with ionophore-doped membranes.

AB - Ion sensors with blocked interfaces, such as coated-wire electrodes (CWEs) and ion-selective field effect transistors (ISFETs), are increasingly being used as alternatives to traditional ion-selective electrodes (ISEs). This work provides insights into the behaviour of ionophore-doped membranes in solution, where one side completely blocks ion transfer, using the Nernst-Planck-Poisson (NPP) model, including reaction terms. Extensive investigations were conducted, demonstrating that the NPP model provides reasonable predictions, as well as insight into the interplay between interfacial kinetics, complexation, diffusion and electrical processes. Model validation is achieved through its application to and analysis of experimental results obtained for AlGaN/GaN ISFETs with ionophore-doped membranes.

KW - Electro-diffusion

KW - Ionophore

KW - Membranes

KW - Nernst-Planck-Poisson

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U2 - 10.1016/j.snb.2017.04.143

DO - 10.1016/j.snb.2017.04.143

M3 - Article

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JO - Sensors and Actuators B: Chemical

JF - Sensors and Actuators B: Chemical

SN - 0925-4005

ER -