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Depth profiling of electronic transport parameters in n-on-p boron-ion-implanted vacancy-doped HgCdTe
Gilberto A. Umana-Membreno, Hemendra Kala, Jarek Antoszewski, Z.H. Ye, W.D. Hu, R.J. Ding, X.S. Chen, W. Lu, L. He, John Dell, Lorenzo Faraone
Research output: Contribution to journal › Article › peer-review
20
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(Scopus)