Depth profiling of electronic transport parameters in n-on-p boron-ion-implanted vacancy-doped HgCdTe

Gilberto A. Umana-Membreno, Hemendra Kala, Jarek Antoszewski, Z.H. Ye, W.D. Hu, R.J. Ding, X.S. Chen, W. Lu, L. He, John Dell, Lorenzo Faraone

Research output: Contribution to journalArticle

17 Citations (Scopus)

Fingerprint Dive into the research topics of 'Depth profiling of electronic transport parameters in n-on-p boron-ion-implanted vacancy-doped HgCdTe'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy