Depth profiling of electronic transport parameters in n-on-p boron-ion-implanted vacancy-doped HgCdTe

Gilberto A. Umana-Membreno, Hemendra Kala, Jarek Antoszewski, Z.H. Ye, W.D. Hu, R.J. Ding, X.S. Chen, W. Lu, L. He, John Dell, Lorenzo Faraone

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

We report results of a detailed study of electronic transport in n-on-p junctions formed by 150-keV boron-ion implantation in vacancy-doped p-type Hg0.769Cd0.231Te without postimplantation thermal annealing. A mobility spectrum analysis methodology in conjunction with a wet chemical etching-based surface removal approach has been employed to depth profile the transport characteristics of the samples. In the as-implanted samples, three distinct electron species were detected which are shown to be associated with (a) low-mobility electrons in the top 220-nm surface-damaged layer (E 1: μ 80K = 2940 cm2/Vs), (b) the B-ion implantation region in the top 500-nm region (E 2: μ 80K = 7490 cm2/Vs), (c) high-mobility electrons in the n-to-p transition region at a depth of 600 nm to 700 nm (E 3: μ 80K = 25,640 cm2/Vs). Due to the maximum magnetic field employed (2 T), hole carriers from the underlying vacancy-doped p-type region were detected only after the removal of the top 220 nm of the profiled sample (μ 80K = 126 cm2/Vs), revealing fully p-type character 800 nm below the original sample surface. A comparison of the extracted E 2 electron concentration and calculated B-impurity profile suggests that the n-type region is due primarily to near-surface implantation-induced lattice damage. © 2013 TMS.
Original languageEnglish
Pages (from-to)3108-3113
JournalJournal of Electronic Materials
Volume42
Issue number11
DOIs
Publication statusPublished - 2013

Fingerprint

Boron
Depth profiling
Vacancies
boron
Ions
Electron mobility
electron mobility
electronics
Ion implantation
ion implantation
ions
Electrons
Wet etching
profiles
Spectrum analysis
spectrum analysis
implantation
surface layers
electrons
etching

Cite this

@article{a3dc49685dad4c1ebb920e2ac862145e,
title = "Depth profiling of electronic transport parameters in n-on-p boron-ion-implanted vacancy-doped HgCdTe",
abstract = "We report results of a detailed study of electronic transport in n-on-p junctions formed by 150-keV boron-ion implantation in vacancy-doped p-type Hg0.769Cd0.231Te without postimplantation thermal annealing. A mobility spectrum analysis methodology in conjunction with a wet chemical etching-based surface removal approach has been employed to depth profile the transport characteristics of the samples. In the as-implanted samples, three distinct electron species were detected which are shown to be associated with (a) low-mobility electrons in the top 220-nm surface-damaged layer (E 1: μ 80K = 2940 cm2/Vs), (b) the B-ion implantation region in the top 500-nm region (E 2: μ 80K = 7490 cm2/Vs), (c) high-mobility electrons in the n-to-p transition region at a depth of 600 nm to 700 nm (E 3: μ 80K = 25,640 cm2/Vs). Due to the maximum magnetic field employed (2 T), hole carriers from the underlying vacancy-doped p-type region were detected only after the removal of the top 220 nm of the profiled sample (μ 80K = 126 cm2/Vs), revealing fully p-type character 800 nm below the original sample surface. A comparison of the extracted E 2 electron concentration and calculated B-impurity profile suggests that the n-type region is due primarily to near-surface implantation-induced lattice damage. {\circledC} 2013 TMS.",
author = "Umana-Membreno, {Gilberto A.} and Hemendra Kala and Jarek Antoszewski and Z.H. Ye and W.D. Hu and R.J. Ding and X.S. Chen and W. Lu and L. He and John Dell and Lorenzo Faraone",
year = "2013",
doi = "10.1007/s11664-013-2659-z",
language = "English",
volume = "42",
pages = "3108--3113",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer",
number = "11",

}

Depth profiling of electronic transport parameters in n-on-p boron-ion-implanted vacancy-doped HgCdTe. / Umana-Membreno, Gilberto A.; Kala, Hemendra; Antoszewski, Jarek; Ye, Z.H.; Hu, W.D.; Ding, R.J.; Chen, X.S.; Lu, W.; He, L.; Dell, John; Faraone, Lorenzo.

In: Journal of Electronic Materials, Vol. 42, No. 11, 2013, p. 3108-3113.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Depth profiling of electronic transport parameters in n-on-p boron-ion-implanted vacancy-doped HgCdTe

AU - Umana-Membreno, Gilberto A.

AU - Kala, Hemendra

AU - Antoszewski, Jarek

AU - Ye, Z.H.

AU - Hu, W.D.

AU - Ding, R.J.

AU - Chen, X.S.

AU - Lu, W.

AU - He, L.

AU - Dell, John

AU - Faraone, Lorenzo

PY - 2013

Y1 - 2013

N2 - We report results of a detailed study of electronic transport in n-on-p junctions formed by 150-keV boron-ion implantation in vacancy-doped p-type Hg0.769Cd0.231Te without postimplantation thermal annealing. A mobility spectrum analysis methodology in conjunction with a wet chemical etching-based surface removal approach has been employed to depth profile the transport characteristics of the samples. In the as-implanted samples, three distinct electron species were detected which are shown to be associated with (a) low-mobility electrons in the top 220-nm surface-damaged layer (E 1: μ 80K = 2940 cm2/Vs), (b) the B-ion implantation region in the top 500-nm region (E 2: μ 80K = 7490 cm2/Vs), (c) high-mobility electrons in the n-to-p transition region at a depth of 600 nm to 700 nm (E 3: μ 80K = 25,640 cm2/Vs). Due to the maximum magnetic field employed (2 T), hole carriers from the underlying vacancy-doped p-type region were detected only after the removal of the top 220 nm of the profiled sample (μ 80K = 126 cm2/Vs), revealing fully p-type character 800 nm below the original sample surface. A comparison of the extracted E 2 electron concentration and calculated B-impurity profile suggests that the n-type region is due primarily to near-surface implantation-induced lattice damage. © 2013 TMS.

AB - We report results of a detailed study of electronic transport in n-on-p junctions formed by 150-keV boron-ion implantation in vacancy-doped p-type Hg0.769Cd0.231Te without postimplantation thermal annealing. A mobility spectrum analysis methodology in conjunction with a wet chemical etching-based surface removal approach has been employed to depth profile the transport characteristics of the samples. In the as-implanted samples, three distinct electron species were detected which are shown to be associated with (a) low-mobility electrons in the top 220-nm surface-damaged layer (E 1: μ 80K = 2940 cm2/Vs), (b) the B-ion implantation region in the top 500-nm region (E 2: μ 80K = 7490 cm2/Vs), (c) high-mobility electrons in the n-to-p transition region at a depth of 600 nm to 700 nm (E 3: μ 80K = 25,640 cm2/Vs). Due to the maximum magnetic field employed (2 T), hole carriers from the underlying vacancy-doped p-type region were detected only after the removal of the top 220 nm of the profiled sample (μ 80K = 126 cm2/Vs), revealing fully p-type character 800 nm below the original sample surface. A comparison of the extracted E 2 electron concentration and calculated B-impurity profile suggests that the n-type region is due primarily to near-surface implantation-induced lattice damage. © 2013 TMS.

U2 - 10.1007/s11664-013-2659-z

DO - 10.1007/s11664-013-2659-z

M3 - Article

VL - 42

SP - 3108

EP - 3113

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 11

ER -