Data related to the nanoscale structural and compositional evolution in resistance change memories

Taimur Ahmed, Sumeet Walia, Edwin L.H. Mayes, Rajesh Ramanathan, Paul Guagliardo, Vipul Bansal, Madhu Bhaskaran, J. Joshua Yang, Sharath Sriram

Research output: Contribution to journalData article

2 Citations (Scopus)

Abstract

The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching are carried out. Chromium doped strontium titanate based resistance change memories are fabricated in a capacitor-like metal-insulator-metal structure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states are collected and presented.

Original languageEnglish
Pages (from-to)18-24
Number of pages7
JournalData in Brief
Volume21
DOIs
Publication statusPublished - 1 Dec 2018

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