Abstract
The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching are carried out. Chromium doped strontium titanate based resistance change memories are fabricated in a capacitor-like metal-insulator-metal structure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states are collected and presented.
Original language | English |
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Pages (from-to) | 18-24 |
Number of pages | 7 |
Journal | Data in Brief |
Volume | 21 |
DOIs | |
Publication status | Published - 1 Dec 2018 |