Data related to the nanoscale structural and compositional evolution in resistance change memories

Taimur Ahmed; Sumeet Walia; Edwin L.H. Mayes; Rajesh Ramanathan; Paul Guagliardo; Vipul Bansal; Madhu Bhaskaran; J. Joshua Yang; Sharath Sriram

doi:10.1016/j.dib.2018.09.087

Data related to the nanoscale structural and compositional evolution in resistance change memories

Taimur Ahmed, Sumeet Walia, Edwin L.H. Mayes, Rajesh Ramanathan, Paul Guagliardo, Vipul Bansal, Madhu Bhaskaran, J. Joshua Yang, Sharath Sriram

Centre for Microscopy, Characterisation & Analysis

Research output: Contribution to journal › Data article

2 Citations (Scopus)

Abstract

The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching are carried out. Chromium doped strontium titanate based resistance change memories are fabricated in a capacitor-like metal-insulator-metal structure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states are collected and presented.

Original language	English
Pages (from-to)	18-24
Number of pages	7
Journal	Data in Brief
Volume	21
DOIs	https://doi.org/10.1016/j.dib.2018.09.087
Publication status	Published - 1 Dec 2018

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title = "Data related to the nanoscale structural and compositional evolution in resistance change memories",

abstract = "The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching are carried out. Chromium doped strontium titanate based resistance change memories are fabricated in a capacitor-like metal-insulator-metal structure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states are collected and presented.",

author = "Taimur Ahmed and Sumeet Walia and Mayes, {Edwin L.H.} and Rajesh Ramanathan and Paul Guagliardo and Vipul Bansal and Madhu Bhaskaran and Yang, {J. Joshua} and Sharath Sriram",

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doi = "10.1016/j.dib.2018.09.087",

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T1 - Data related to the nanoscale structural and compositional evolution in resistance change memories

AU - Ahmed, Taimur

AU - Walia, Sumeet

AU - Mayes, Edwin L.H.

AU - Ramanathan, Rajesh

AU - Guagliardo, Paul

AU - Bansal, Vipul

AU - Bhaskaran, Madhu

AU - Yang, J. Joshua

AU - Sriram, Sharath

PY - 2018/12/1

Y1 - 2018/12/1

N2 - The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching are carried out. Chromium doped strontium titanate based resistance change memories are fabricated in a capacitor-like metal-insulator-metal structure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states are collected and presented.

AB - The data included in this article provides additional supplementary information on our recent publication describing “Inducing tunable switching behavior in a single memristor” [1]. Analyses of micro/nano-structural and compositional changes induced in a resistive oxide memory during resistive switching are carried out. Chromium doped strontium titanate based resistance change memories are fabricated in a capacitor-like metal-insulator-metal structure and subjected to different biasing conditions to set memory states. Transmission electron microscope based cross-sectional analyses of the memory devices in different memory states are collected and presented.

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VL - 21

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EP - 24

JO - Data in Brief

JF - Data in Brief

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