The current–voltage (I–V) characterization was studied on the (111)-oriented BaTiO3 thin films on Pt-buffered Si substrates. The ferroelectric domains polarized downward had a smaller resistance and a better corresponding electrical property. An abnormal asymmetric switching was observed, which is similar to the memristive behavior at the pre-switching state. With increasing bias, the I–V curve under the positive bias tended to be saturated. The film showed a better endurance of the negative bias than the positive one. Such findings are promising for the potential utilization of barium titanate thin films as new type memristive memory application apart from the classic ferroelectric memory.
|Number of pages||4|
|Journal||JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS|
|Publication status||Published - 2015|