Current–voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	174-176
Journal	PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
Volume	46
DOIs	https://doi.org/10.1016/j.physe.2012.07.026
Publication status	Published - 2012

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@article{0f5173b495844939ac5fc09f1261b136,

title = "Current–voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors",

author = "{Asgari Tokaldani}, Asghar and N. Fazli",

year = "2012",

doi = "10.1016/j.physe.2012.07.026",

language = "English",

volume = "46",

pages = "174--176",

journal = "PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES",

issn = "1386-9477",

publisher = "Elsevier",

}

TY - JOUR

T1 - Current–voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors

AU - Asgari Tokaldani, Asghar

AU - Fazli, N.

PY - 2012

Y1 - 2012

U2 - 10.1016/j.physe.2012.07.026

DO - 10.1016/j.physe.2012.07.026

M3 - Article

VL - 46

SP - 174

EP - 176

JO - PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

JF - PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

SN - 1386-9477

ER -