Current–voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors

    Research output: Contribution to journalArticle

    1 Citation (Scopus)
    Original languageEnglish
    Pages (from-to)174-176
    JournalPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
    Volume46
    DOIs
    Publication statusPublished - 2012

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