Cubic phase Sn-rich GeSn nanocrystals in a Ge matrix

A.A. Tonkikh; N.D. Zakharov; Alexandra Suvorova; C. Eisenschmidt; J. Schilling; P.G. Werner

doi:10.1021/cg401652f

Cubic phase Sn-rich GeSn nanocrystals in a Ge matrix

A.A. Tonkikh, N.D. Zakharov, Alexandra Suvorova, C. Eisenschmidt, J. Schilling, P.G. Werner

Centre for Microscopy, Characterisation & Analysis

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

We report on the synthesis of a novel optoelectronic material, Sn-rich Ge1-xSnx nanocrystals in a Ge matrix. The nanocrystals have been formed after annealing of a metastable Ge-rich Ge1-ySn y film, which was embedded in the Ge matrix. Electron microscopy investigations have revealed that these nanocrystals possess two lattice types: (i) a diamondlike cubic structure with a high Sn fraction (x > 0.5) and (ii) an ordered zincblende structure (x = 0.5). © 2014 American Chemical Society.

Original language	English
Pages (from-to)	1617-1622
Journal	Crystal Growth & Design
Volume	14
Issue number	4
DOIs	https://doi.org/10.1021/cg401652f
Publication status	Published - 2014

Access to Document

10.1021/cg401652f

Cite this

@article{52d9e64846d845ba94e4785738fae04b,

title = "Cubic phase Sn-rich GeSn nanocrystals in a Ge matrix",

abstract = "We report on the synthesis of a novel optoelectronic material, Sn-rich Ge1-xSnx nanocrystals in a Ge matrix. The nanocrystals have been formed after annealing of a metastable Ge-rich Ge1-ySn y film, which was embedded in the Ge matrix. Electron microscopy investigations have revealed that these nanocrystals possess two lattice types: (i) a diamondlike cubic structure with a high Sn fraction (x > 0.5) and (ii) an ordered zincblende structure (x = 0.5). {\textcopyright} 2014 American Chemical Society.",

author = "A.A. Tonkikh and N.D. Zakharov and Alexandra Suvorova and C. Eisenschmidt and J. Schilling and P.G. Werner",

year = "2014",

doi = "10.1021/cg401652f",

language = "English",

volume = "14",

pages = "1617--1622",

journal = "Crystal Growth & Design",

issn = "1528-7483",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - Cubic phase Sn-rich GeSn nanocrystals in a Ge matrix

AU - Tonkikh, A.A.

AU - Zakharov, N.D.

AU - Suvorova, Alexandra

AU - Eisenschmidt, C.

AU - Schilling, J.

AU - Werner, P.G.

PY - 2014

Y1 - 2014

N2 - We report on the synthesis of a novel optoelectronic material, Sn-rich Ge1-xSnx nanocrystals in a Ge matrix. The nanocrystals have been formed after annealing of a metastable Ge-rich Ge1-ySn y film, which was embedded in the Ge matrix. Electron microscopy investigations have revealed that these nanocrystals possess two lattice types: (i) a diamondlike cubic structure with a high Sn fraction (x > 0.5) and (ii) an ordered zincblende structure (x = 0.5). © 2014 American Chemical Society.

AB - We report on the synthesis of a novel optoelectronic material, Sn-rich Ge1-xSnx nanocrystals in a Ge matrix. The nanocrystals have been formed after annealing of a metastable Ge-rich Ge1-ySn y film, which was embedded in the Ge matrix. Electron microscopy investigations have revealed that these nanocrystals possess two lattice types: (i) a diamondlike cubic structure with a high Sn fraction (x > 0.5) and (ii) an ordered zincblende structure (x = 0.5). © 2014 American Chemical Society.

U2 - 10.1021/cg401652f

DO - 10.1021/cg401652f

M3 - Article

VL - 14

SP - 1617

EP - 1622

JO - Crystal Growth & Design

JF - Crystal Growth & Design

SN - 1528-7483

IS - 4

ER -

Cubic phase Sn-rich GeSn nanocrystals in a Ge matrix

Abstract

Access to Document

Fingerprint

Cite this