Crystallization of silicon nitride thin films synthesized by plasma-enhanced chemical vapour deposition

N Jehanathan; Martin Saunders; Y Liu; John Dell

doi:10.1016/j.scriptamat.2007.06.035

Crystallization of silicon nitride thin films synthesized by plasma-enhanced chemical vapour deposition

N Jehanathan
, Martin Saunders
, Y Liu
, John Dell

Research output: Contribution to journal › Article › peer-review

17 Citations (Web of Science)

Abstract

This paper reports on a unique crystallization phenomenon of amorphous plasma-enhanced chemical vapour deposited SiNx thin films induced by heating to temperatures >= 1148 K in air. The crystallization occurs as randomly scattered pits, within which clusters of smaller crystals form. The crystals formed are free of oxygen and are identified to be alpha-Si3N4. The crystallization is associated with a large volume contraction, which results in internal cracking. Crown Copyright (c) 2007 Published by Elsevier Ltd. on behalf of Acta Materialia Inc. All rights reserved.

Original language	English
Pages (from-to)	739-742
Journal	Scripta Materialia
Volume	57
Issue number	8
DOIs	https://doi.org/10.1016/j.scriptamat.2007.06.035
Publication status	Published - 2007

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10.1016/j.scriptamat.2007.06.035

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title = "Crystallization of silicon nitride thin films synthesized by plasma-enhanced chemical vapour deposition",

abstract = "This paper reports on a unique crystallization phenomenon of amorphous plasma-enhanced chemical vapour deposited SiNx thin films induced by heating to temperatures >= 1148 K in air. The crystallization occurs as randomly scattered pits, within which clusters of smaller crystals form. The crystals formed are free of oxygen and are identified to be alpha-Si3N4. The crystallization is associated with a large volume contraction, which results in internal cracking. Crown Copyright (c) 2007 Published by Elsevier Ltd. on behalf of Acta Materialia Inc. All rights reserved.",

author = "N Jehanathan and Martin Saunders and Y Liu and John Dell",

year = "2007",

doi = "10.1016/j.scriptamat.2007.06.035",

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AU - Jehanathan, N

AU - Saunders, Martin

AU - Liu, Y

AU - Dell, John

PY - 2007

Y1 - 2007

N2 - This paper reports on a unique crystallization phenomenon of amorphous plasma-enhanced chemical vapour deposited SiNx thin films induced by heating to temperatures >= 1148 K in air. The crystallization occurs as randomly scattered pits, within which clusters of smaller crystals form. The crystals formed are free of oxygen and are identified to be alpha-Si3N4. The crystallization is associated with a large volume contraction, which results in internal cracking. Crown Copyright (c) 2007 Published by Elsevier Ltd. on behalf of Acta Materialia Inc. All rights reserved.

AB - This paper reports on a unique crystallization phenomenon of amorphous plasma-enhanced chemical vapour deposited SiNx thin films induced by heating to temperatures >= 1148 K in air. The crystallization occurs as randomly scattered pits, within which clusters of smaller crystals form. The crystals formed are free of oxygen and are identified to be alpha-Si3N4. The crystallization is associated with a large volume contraction, which results in internal cracking. Crown Copyright (c) 2007 Published by Elsevier Ltd. on behalf of Acta Materialia Inc. All rights reserved.

U2 - 10.1016/j.scriptamat.2007.06.035

DO - 10.1016/j.scriptamat.2007.06.035

M3 - Article

SN - 1359-6462

VL - 57

SP - 739

EP - 742

JO - Scripta Materialia

JF - Scripta Materialia

IS - 8

ER -

Crystallization of silicon nitride thin films synthesized by plasma-enhanced chemical vapour deposition

Abstract

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