Cryogenic transistor measurement and modeling for engineering applications

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@article{37f936510bdf487d9dec0f8871f13d28,

title = "Cryogenic transistor measurement and modeling for engineering applications",

author = "Maxim Goryachev and S. Galliou and P. Abb{\'e}",

year = "2010",

doi = "10.1016/j.cryogenics.2010.02.002",

language = "English",

volume = "50",

pages = "381–389",

journal = "Cryogenics",

issn = "0011-2275",

publisher = "Elsevier",

number = "1",

}