Crossbar array based on tri-valued memristors: its design and application

Xiaoyuan Wang, Xinggang Bao, Xiaojing Li, Xinhui Chen, Gongzhi Liu, Sung Mo Kang, Herbert Ho Ching Iu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Memristor has been widely studied in the fields of non-volatile memory, digital logic circuits and neuromorphic computing due to its ultra-high storage density and information processing capacity. The current research on memristor crossbar array is mainly based on binary memristors and thus suited for binary logic. The crossbar array based on tri-valued memristors is proposed, along with its reset and read/write operations. We present a method for implementing a tri-valued memristor with two binary memristors. Tri-valued-memristor-based crossbar arrays significantly increase the storage density and the information processing capacity. An encode-store-decode circuit for three binary signals is designed using the crossbar array. It can transform three streams of binary signals to a single ternary signal by encoding and reverse transform the encoded signal by decoding. The designed circuits are verified by LTSpice simulation using the Knowm memristor model.

Original languageEnglish
Pages (from-to)20353-20364
Number of pages12
JournalNonlinear Dynamics
Volume112
Issue number22
Early online date12 Aug 2024
DOIs
Publication statusPublished - Nov 2024

Fingerprint

Dive into the research topics of 'Crossbar array based on tri-valued memristors: its design and application'. Together they form a unique fingerprint.

Cite this