Correction to ``Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors''

Research output: Contribution to journalComment/debate

Original languageEnglish
JournalIEEE Transactions on Electron Devices
DOIs
Publication statusPublished - 23 Oct 2018

Cite this

@article{4266c71d68544452a0d8f34c9595fc87,
title = "Correction to ``Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors''",
keywords = "Australia, Biographies, Doping, Electron devices, Photodetectors",
author = "Nima Dehdashtiakhavan and Umana-Membreno, {Gilberto Antonio} and Renjie Gu and Jarek Antoszewski and Lorenzo Faraone",
year = "2018",
month = "10",
day = "23",
doi = "10.1109/TED.2018.2875846",
language = "English",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "IEEE, Institute of Electrical and Electronics Engineers",

}

TY - JOUR

T1 - Correction to ``Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors''

AU - Dehdashtiakhavan, Nima

AU - Umana-Membreno, Gilberto Antonio

AU - Gu, Renjie

AU - Antoszewski, Jarek

AU - Faraone, Lorenzo

PY - 2018/10/23

Y1 - 2018/10/23

KW - Australia

KW - Biographies

KW - Doping

KW - Electron devices

KW - Photodetectors

UR - http://www.scopus.com/inward/record.url?scp=85055677607&partnerID=8YFLogxK

U2 - 10.1109/TED.2018.2875846

DO - 10.1109/TED.2018.2875846

M3 - Comment/debate

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

ER -