Correction to ``Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors''

Nima Dehdashtiakhavan; Gilberto Antonio Umana-Membreno; Renjie Gu; Jarek Antoszewski; Lorenzo Faraone

doi:10.1109/TED.2018.2875846

Correction to ``Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors''

Nima Dehdashtiakhavan, Gilberto Antonio Umana-Membreno, Renjie Gu, Jarek Antoszewski, Lorenzo Faraone

School of Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English
Article number	8502930
Pages (from-to)	833
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	66
Issue number	1
DOIs	https://doi.org/10.1109/TED.2018.2875846
Publication status	Published - Jan 2019

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10.1109/TED.2018.2875846

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title = "Correction to ``Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors''",

keywords = "Australia, Biographies, Doping, Electron devices, Photodetectors",

author = "Nima Dehdashtiakhavan and Umana-Membreno, {Gilberto Antonio} and Renjie Gu and Jarek Antoszewski and Lorenzo Faraone",

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AU - Dehdashtiakhavan, Nima

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AU - Gu, Renjie

AU - Antoszewski, Jarek

AU - Faraone, Lorenzo

PY - 2019/1

Y1 - 2019/1

KW - Australia

KW - Biographies

KW - Doping

KW - Electron devices

KW - Photodetectors

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U2 - 10.1109/TED.2018.2875846

DO - 10.1109/TED.2018.2875846

M3 - Comment/debate

AN - SCOPUS:85055677607

SN - 0018-9383

VL - 66

SP - 833

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

M1 - 8502930

ER -

Correction to ``Delta Doping in HgCdTe-Based Unipolar Barrier Photodetectors''

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