Conventional and analytical electron microscopy study of phase transformation in implanted diamond layers

S. Rubanov, B. A. Fairchild, A. Suvorova, P. Olivero, S. Prawer

Research output: Chapter in Book/Conference paperConference paperpeer-review

Abstract

Graphitization of ion-beam induced amorphous layers in diamond has attracted significant interest due to ability to fabricate device structures containing two structural forms of carbon. The graphitic layers can be chemically etched to form free-standing diamond films. In the present work the graphitization process was studied using conventional and analytical transmission electron microscopy (TEM). It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with graphitic phase in the middle of the amorphous layer. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers.

Original languageEnglish
Title of host publication8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8
PublisherJohn Wiley & Sons
Pages3363-3369
Number of pages7
ISBN (Print)9781632660008
DOIs
Publication statusPublished - 2013
Event8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8 - Waikoloa, HI, United States
Duration: 4 Aug 20139 Aug 2013

Publication series

Name8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8
Volume4

Conference

Conference8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8
Country/TerritoryUnited States
CityWaikoloa, HI
Period4/08/139/08/13

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