Controlled vapour-phase deposition synthesis and growth mechanism of Bi2Te3 nanostructures

Wen Lei, Imtiaz Madni, Yongling Ren, C.L. Yuan, G.Q. Luo, Lorenzo Faraone

Research output: Contribution to journalArticle

9 Citations (Scopus)
333 Downloads (Pure)

Abstract

© 2016 Author(s). This work presents a study on the controlled growth and the growth mechanism of vapour-phase deposited two-dimensional Bi2Te3 nanostructures by investigating the influence of growth conditions on the morphology of Bi2Te3 nanostructures. The formation of a hexagonal plate geometry for Bi2Te3 nanostructures is a consequence of the large difference in growth rate between crystal facets along and directions. Under low Ar carrier gas flow rates (60-100 sccm), the growth of Bi2Te3 nanoplates occurs in the mass-transport limited regime, whereas under high carrier gas flow rates (130 sccm), the growth of Bi2Te3 nanoplates is in the surface-reaction limited regime. This leads to an increase in the lateral size of Bi2Te3 nanoplates with increasing the Ar carrier gas flow rate from 60 to 100 sccm, and a decrease in size for a flow rate of 130 sccm. In addition, the lateral size of Bi2Te3 nanoplates was found to increase with increasing growth time due to the kinetic characteristics of material growth. The proposed growth model provides an effective guide for achieving controlled growth of Bi2Te3 nanoplates, as well as other two dimensional nanomaterials.
Original languageEnglish
Pages (from-to)083106-1 - 083106-5
JournalApplied Physics Letters
Volume109
Issue number8
DOIs
Publication statusPublished - Aug 2016

Fingerprint Dive into the research topics of 'Controlled vapour-phase deposition synthesis and growth mechanism of Bi2Te3 nanostructures'. Together they form a unique fingerprint.

Cite this