Controlled vapour-phase deposition synthesis and growth mechanism of Bi2Te3 nanostructures

Wen Lei, Imtiaz Madni, Yongling Ren, C.L. Yuan, G.Q. Luo, Lorenzo Faraone

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    Abstract

    © 2016 Author(s). This work presents a study on the controlled growth and the growth mechanism of vapour-phase deposited two-dimensional Bi2Te3 nanostructures by investigating the influence of growth conditions on the morphology of Bi2Te3 nanostructures. The formation of a hexagonal plate geometry for Bi2Te3 nanostructures is a consequence of the large difference in growth rate between crystal facets along and directions. Under low Ar carrier gas flow rates (60-100 sccm), the growth of Bi2Te3 nanoplates occurs in the mass-transport limited regime, whereas under high carrier gas flow rates (130 sccm), the growth of Bi2Te3 nanoplates is in the surface-reaction limited regime. This leads to an increase in the lateral size of Bi2Te3 nanoplates with increasing the Ar carrier gas flow rate from 60 to 100 sccm, and a decrease in size for a flow rate of 130 sccm. In addition, the lateral size of Bi2Te3 nanoplates was found to increase with increasing growth time due to the kinetic characteristics of material growth. The proposed growth model provides an effective guide for achieving controlled growth of Bi2Te3 nanoplates, as well as other two dimensional nanomaterials.
    Original languageEnglish
    Pages (from-to)083106-1 - 083106-5
    JournalApplied Physics Letters
    Volume109
    Issue number8
    DOIs
    Publication statusPublished - Aug 2016

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    vapor phases
    synthesis
    flow velocity
    gas flow
    surface reactions
    flat surfaces
    kinetics
    geometry
    crystals

    Cite this

    Lei, Wen ; Madni, Imtiaz ; Ren, Yongling ; Yuan, C.L. ; Luo, G.Q. ; Faraone, Lorenzo. / Controlled vapour-phase deposition synthesis and growth mechanism of Bi2Te3 nanostructures. In: Applied Physics Letters. 2016 ; Vol. 109, No. 8. pp. 083106-1 - 083106-5.
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    abstract = "{\circledC} 2016 Author(s). This work presents a study on the controlled growth and the growth mechanism of vapour-phase deposited two-dimensional Bi2Te3 nanostructures by investigating the influence of growth conditions on the morphology of Bi2Te3 nanostructures. The formation of a hexagonal plate geometry for Bi2Te3 nanostructures is a consequence of the large difference in growth rate between crystal facets along and directions. Under low Ar carrier gas flow rates (60-100 sccm), the growth of Bi2Te3 nanoplates occurs in the mass-transport limited regime, whereas under high carrier gas flow rates (130 sccm), the growth of Bi2Te3 nanoplates is in the surface-reaction limited regime. This leads to an increase in the lateral size of Bi2Te3 nanoplates with increasing the Ar carrier gas flow rate from 60 to 100 sccm, and a decrease in size for a flow rate of 130 sccm. In addition, the lateral size of Bi2Te3 nanoplates was found to increase with increasing growth time due to the kinetic characteristics of material growth. The proposed growth model provides an effective guide for achieving controlled growth of Bi2Te3 nanoplates, as well as other two dimensional nanomaterials.",
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    Controlled vapour-phase deposition synthesis and growth mechanism of Bi2Te3 nanostructures. / Lei, Wen; Madni, Imtiaz; Ren, Yongling; Yuan, C.L.; Luo, G.Q.; Faraone, Lorenzo.

    In: Applied Physics Letters, Vol. 109, No. 8, 08.2016, p. 083106-1 - 083106-5.

    Research output: Contribution to journalArticle

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    AU - Lei, Wen

    AU - Madni, Imtiaz

    AU - Ren, Yongling

    AU - Yuan, C.L.

    AU - Luo, G.Q.

    AU - Faraone, Lorenzo

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    AB - © 2016 Author(s). This work presents a study on the controlled growth and the growth mechanism of vapour-phase deposited two-dimensional Bi2Te3 nanostructures by investigating the influence of growth conditions on the morphology of Bi2Te3 nanostructures. The formation of a hexagonal plate geometry for Bi2Te3 nanostructures is a consequence of the large difference in growth rate between crystal facets along and directions. Under low Ar carrier gas flow rates (60-100 sccm), the growth of Bi2Te3 nanoplates occurs in the mass-transport limited regime, whereas under high carrier gas flow rates (130 sccm), the growth of Bi2Te3 nanoplates is in the surface-reaction limited regime. This leads to an increase in the lateral size of Bi2Te3 nanoplates with increasing the Ar carrier gas flow rate from 60 to 100 sccm, and a decrease in size for a flow rate of 130 sccm. In addition, the lateral size of Bi2Te3 nanoplates was found to increase with increasing growth time due to the kinetic characteristics of material growth. The proposed growth model provides an effective guide for achieving controlled growth of Bi2Te3 nanoplates, as well as other two dimensional nanomaterials.

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