Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs

A. N. Nazarov, C. W. Lee, A. Kranti, I. Ferain, R. Yan, N. Dehdashti Akhavan, P. Razavi, R. Yu, J. P. Colinge

Research output: Chapter in Book/Conference paperConference paper

6 Citations (Scopus)

Abstract

Random telegraph-signal noise (RTN) is observed in n-channel junctionless metal-oxide-silicon field effect transistors (MOSFETs) and n-channel inversion-mode MOSFETs fabricated in the same technological process on UNIBOND (R) SOI wafers as a function of gate and drain voltages and measurement temperature. It is shown that the RTN of the drain current in the JL transistor operating in linear mode begins to appear when the transistor starts to form an accumulation channel and has considerable lower amplitude than in the IM MOSFET. On the basis of analysis of the average charge capture and emission time of the charge from the traps responsible for the RTN the main parameters of the traps are determined.

Original languageEnglish
Title of host publicationADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15
EditorsY Omura, H Ishii, BY Nguyen, S Selberherr, F Gamiz, JA Martino, JP Raskin
PublisherELECTROCHEMICAL SOC INC
Pages73-78
Number of pages6
ISBN (Print)978-1-56677-866-4
DOIs
Publication statusPublished - 2011
Event15th International Symposium on Advanced Semiconductor-On-Insulator Technology and Related Physics/219th Meeting of the Electrochemical-Society/Symposium on Electrodeposition for Energy Applications 2 - Montreal, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
PublisherELECTROCHEMICAL SOC INC
Volume35
ISSN (Print)1938-5862

Conference

Conference15th International Symposium on Advanced Semiconductor-On-Insulator Technology and Related Physics/219th Meeting of the Electrochemical-Society/Symposium on Electrodeposition for Energy Applications 2
CountryCanada
CityMontreal
Period1/05/116/05/11

Cite this

Nazarov, A. N., Lee, C. W., Kranti, A., Ferain, I., Yan, R., Akhavan, N. D., ... Colinge, J. P. (2011). Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs. In Y. Omura, H. Ishii, BY. Nguyen, S. Selberherr, F. Gamiz, JA. Martino, & JP. Raskin (Eds.), ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15 (pp. 73-78). (ECS Transactions; Vol. 35). ELECTROCHEMICAL SOC INC. https://doi.org/10.1149/1.3570779
Nazarov, A. N. ; Lee, C. W. ; Kranti, A. ; Ferain, I. ; Yan, R. ; Akhavan, N. Dehdashti ; Razavi, P. ; Yu, R. ; Colinge, J. P. / Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs. ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15. editor / Y Omura ; H Ishii ; BY Nguyen ; S Selberherr ; F Gamiz ; JA Martino ; JP Raskin. ELECTROCHEMICAL SOC INC, 2011. pp. 73-78 (ECS Transactions).
@inproceedings{b48722c7e0064e53aba35a5d06f307d0,
title = "Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs",
abstract = "Random telegraph-signal noise (RTN) is observed in n-channel junctionless metal-oxide-silicon field effect transistors (MOSFETs) and n-channel inversion-mode MOSFETs fabricated in the same technological process on UNIBOND (R) SOI wafers as a function of gate and drain voltages and measurement temperature. It is shown that the RTN of the drain current in the JL transistor operating in linear mode begins to appear when the transistor starts to form an accumulation channel and has considerable lower amplitude than in the IM MOSFET. On the basis of analysis of the average charge capture and emission time of the charge from the traps responsible for the RTN the main parameters of the traps are determined.",
keywords = "MOSFETS",
author = "Nazarov, {A. N.} and Lee, {C. W.} and A. Kranti and I. Ferain and R. Yan and Akhavan, {N. Dehdashti} and P. Razavi and R. Yu and Colinge, {J. P.}",
year = "2011",
doi = "10.1149/1.3570779",
language = "English",
isbn = "978-1-56677-866-4",
series = "ECS Transactions",
publisher = "ELECTROCHEMICAL SOC INC",
pages = "73--78",
editor = "Y Omura and H Ishii and BY Nguyen and S Selberherr and F Gamiz and JA Martino and JP Raskin",
booktitle = "ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15",

}

Nazarov, AN, Lee, CW, Kranti, A, Ferain, I, Yan, R, Akhavan, ND, Razavi, P, Yu, R & Colinge, JP 2011, Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs. in Y Omura, H Ishii, BY Nguyen, S Selberherr, F Gamiz, JA Martino & JP Raskin (eds), ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15. ECS Transactions, vol. 35, ELECTROCHEMICAL SOC INC, pp. 73-78, 15th International Symposium on Advanced Semiconductor-On-Insulator Technology and Related Physics/219th Meeting of the Electrochemical-Society/Symposium on Electrodeposition for Energy Applications 2, Montreal, Canada, 1/05/11. https://doi.org/10.1149/1.3570779

Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs. / Nazarov, A. N.; Lee, C. W.; Kranti, A.; Ferain, I.; Yan, R.; Akhavan, N. Dehdashti; Razavi, P.; Yu, R.; Colinge, J. P.

ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15. ed. / Y Omura; H Ishii; BY Nguyen; S Selberherr; F Gamiz; JA Martino; JP Raskin. ELECTROCHEMICAL SOC INC, 2011. p. 73-78 (ECS Transactions; Vol. 35).

Research output: Chapter in Book/Conference paperConference paper

TY - GEN

T1 - Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs

AU - Nazarov, A. N.

AU - Lee, C. W.

AU - Kranti, A.

AU - Ferain, I.

AU - Yan, R.

AU - Akhavan, N. Dehdashti

AU - Razavi, P.

AU - Yu, R.

AU - Colinge, J. P.

PY - 2011

Y1 - 2011

N2 - Random telegraph-signal noise (RTN) is observed in n-channel junctionless metal-oxide-silicon field effect transistors (MOSFETs) and n-channel inversion-mode MOSFETs fabricated in the same technological process on UNIBOND (R) SOI wafers as a function of gate and drain voltages and measurement temperature. It is shown that the RTN of the drain current in the JL transistor operating in linear mode begins to appear when the transistor starts to form an accumulation channel and has considerable lower amplitude than in the IM MOSFET. On the basis of analysis of the average charge capture and emission time of the charge from the traps responsible for the RTN the main parameters of the traps are determined.

AB - Random telegraph-signal noise (RTN) is observed in n-channel junctionless metal-oxide-silicon field effect transistors (MOSFETs) and n-channel inversion-mode MOSFETs fabricated in the same technological process on UNIBOND (R) SOI wafers as a function of gate and drain voltages and measurement temperature. It is shown that the RTN of the drain current in the JL transistor operating in linear mode begins to appear when the transistor starts to form an accumulation channel and has considerable lower amplitude than in the IM MOSFET. On the basis of analysis of the average charge capture and emission time of the charge from the traps responsible for the RTN the main parameters of the traps are determined.

KW - MOSFETS

U2 - 10.1149/1.3570779

DO - 10.1149/1.3570779

M3 - Conference paper

SN - 978-1-56677-866-4

T3 - ECS Transactions

SP - 73

EP - 78

BT - ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15

A2 - Omura, Y

A2 - Ishii, H

A2 - Nguyen, BY

A2 - Selberherr, S

A2 - Gamiz, F

A2 - Martino, JA

A2 - Raskin, JP

PB - ELECTROCHEMICAL SOC INC

ER -

Nazarov AN, Lee CW, Kranti A, Ferain I, Yan R, Akhavan ND et al. Comparative Study of Random Telegraph Noise in Junctionless and Inversion-Mode MuGFETs. In Omura Y, Ishii H, Nguyen BY, Selberherr S, Gamiz F, Martino JA, Raskin JP, editors, ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 15. ELECTROCHEMICAL SOC INC. 2011. p. 73-78. (ECS Transactions). https://doi.org/10.1149/1.3570779