Cobalt and manganese carboxylates for metal oxide thin film deposition by applying the atmospheric pressure combustion chemical vapour deposition process

B. S. M. Kretzschmar, K. Assim, A. Preuss, A. Heft, M. Korb, M. Puegner, T. Lampke, B. Gruenler, H. Lang

Research output: Contribution to journalArticle

Abstract

Coordination complexes [M(O2CCH2OC2H4OMe)(2)] (M = Co, 4; M = Mn, 5) are accessible by the anion exchange reaction between the corresponding metal acetates [M(OAc)(2)(H2O)(4)] (M = Co, 1; M = Mn, 2) and the carboxylic acid HO2CCH2OC2H4OMe (3). IR spectroscopy confirms the chelating or mu-bridging binding mode of the carboxylato ligands to M(II). The molecular structure of 5 in the solid state confirms a distorted octahedral arrangement at Mn(II), setup by the two carboxylato ligands including their alpha-ether oxygen atoms, resulting in an overall two-dimensional coordination network. The thermal decomposition behavior of 4 and 5 was studied by TG-MS, revealing that decarboxylation occurs initially giving [M(CH2OC2H4OMe)(2)], which further decomposes by MC, CO and CC bond cleavages. Complexes 4 and 5 were used as CCVD (combustion chemical vapour deposition) precursors for the deposition of Co3O4, crystalline Mn3O4 and amorphous Mn2O3 thin films on silicon and glass substrates. The deposition experiments were carried out using three different precursor solutions (0.4, 0.6 and 0.8 M) at 400 degrees C. Depending on the precursor concentration, particulated layers were obtained as evidenced by SEM. The layer thicknesses range from 32 to 170 nm. The rms roughness of the respective films was determined by AFM, displaying that the higher the precursor concentration, the rougher the Co3O4 surface is (17.4-43.8 nm), while the manganese oxide films are almost similar (6.2-9.8 nm).

Original languageEnglish
Pages (from-to)15632-15640
Number of pages9
JournalRSC Advances
Volume8
Issue number28
DOIs
Publication statusPublished - 25 Apr 2018
Externally publishedYes

Cite this

Kretzschmar, B. S. M. ; Assim, K. ; Preuss, A. ; Heft, A. ; Korb, M. ; Puegner, M. ; Lampke, T. ; Gruenler, B. ; Lang, H. / Cobalt and manganese carboxylates for metal oxide thin film deposition by applying the atmospheric pressure combustion chemical vapour deposition process. In: RSC Advances. 2018 ; Vol. 8, No. 28. pp. 15632-15640.
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abstract = "Coordination complexes [M(O2CCH2OC2H4OMe)(2)] (M = Co, 4; M = Mn, 5) are accessible by the anion exchange reaction between the corresponding metal acetates [M(OAc)(2)(H2O)(4)] (M = Co, 1; M = Mn, 2) and the carboxylic acid HO2CCH2OC2H4OMe (3). IR spectroscopy confirms the chelating or mu-bridging binding mode of the carboxylato ligands to M(II). The molecular structure of 5 in the solid state confirms a distorted octahedral arrangement at Mn(II), setup by the two carboxylato ligands including their alpha-ether oxygen atoms, resulting in an overall two-dimensional coordination network. The thermal decomposition behavior of 4 and 5 was studied by TG-MS, revealing that decarboxylation occurs initially giving [M(CH2OC2H4OMe)(2)], which further decomposes by MC, CO and CC bond cleavages. Complexes 4 and 5 were used as CCVD (combustion chemical vapour deposition) precursors for the deposition of Co3O4, crystalline Mn3O4 and amorphous Mn2O3 thin films on silicon and glass substrates. The deposition experiments were carried out using three different precursor solutions (0.4, 0.6 and 0.8 M) at 400 degrees C. Depending on the precursor concentration, particulated layers were obtained as evidenced by SEM. The layer thicknesses range from 32 to 170 nm. The rms roughness of the respective films was determined by AFM, displaying that the higher the precursor concentration, the rougher the Co3O4 surface is (17.4-43.8 nm), while the manganese oxide films are almost similar (6.2-9.8 nm).",
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Cobalt and manganese carboxylates for metal oxide thin film deposition by applying the atmospheric pressure combustion chemical vapour deposition process. / Kretzschmar, B. S. M.; Assim, K.; Preuss, A.; Heft, A.; Korb, M.; Puegner, M.; Lampke, T.; Gruenler, B.; Lang, H.

In: RSC Advances, Vol. 8, No. 28, 25.04.2018, p. 15632-15640.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Cobalt and manganese carboxylates for metal oxide thin film deposition by applying the atmospheric pressure combustion chemical vapour deposition process

AU - Kretzschmar, B. S. M.

AU - Assim, K.

AU - Preuss, A.

AU - Heft, A.

AU - Korb, M.

AU - Puegner, M.

AU - Lampke, T.

AU - Gruenler, B.

AU - Lang, H.

PY - 2018/4/25

Y1 - 2018/4/25

N2 - Coordination complexes [M(O2CCH2OC2H4OMe)(2)] (M = Co, 4; M = Mn, 5) are accessible by the anion exchange reaction between the corresponding metal acetates [M(OAc)(2)(H2O)(4)] (M = Co, 1; M = Mn, 2) and the carboxylic acid HO2CCH2OC2H4OMe (3). IR spectroscopy confirms the chelating or mu-bridging binding mode of the carboxylato ligands to M(II). The molecular structure of 5 in the solid state confirms a distorted octahedral arrangement at Mn(II), setup by the two carboxylato ligands including their alpha-ether oxygen atoms, resulting in an overall two-dimensional coordination network. The thermal decomposition behavior of 4 and 5 was studied by TG-MS, revealing that decarboxylation occurs initially giving [M(CH2OC2H4OMe)(2)], which further decomposes by MC, CO and CC bond cleavages. Complexes 4 and 5 were used as CCVD (combustion chemical vapour deposition) precursors for the deposition of Co3O4, crystalline Mn3O4 and amorphous Mn2O3 thin films on silicon and glass substrates. The deposition experiments were carried out using three different precursor solutions (0.4, 0.6 and 0.8 M) at 400 degrees C. Depending on the precursor concentration, particulated layers were obtained as evidenced by SEM. The layer thicknesses range from 32 to 170 nm. The rms roughness of the respective films was determined by AFM, displaying that the higher the precursor concentration, the rougher the Co3O4 surface is (17.4-43.8 nm), while the manganese oxide films are almost similar (6.2-9.8 nm).

AB - Coordination complexes [M(O2CCH2OC2H4OMe)(2)] (M = Co, 4; M = Mn, 5) are accessible by the anion exchange reaction between the corresponding metal acetates [M(OAc)(2)(H2O)(4)] (M = Co, 1; M = Mn, 2) and the carboxylic acid HO2CCH2OC2H4OMe (3). IR spectroscopy confirms the chelating or mu-bridging binding mode of the carboxylato ligands to M(II). The molecular structure of 5 in the solid state confirms a distorted octahedral arrangement at Mn(II), setup by the two carboxylato ligands including their alpha-ether oxygen atoms, resulting in an overall two-dimensional coordination network. The thermal decomposition behavior of 4 and 5 was studied by TG-MS, revealing that decarboxylation occurs initially giving [M(CH2OC2H4OMe)(2)], which further decomposes by MC, CO and CC bond cleavages. Complexes 4 and 5 were used as CCVD (combustion chemical vapour deposition) precursors for the deposition of Co3O4, crystalline Mn3O4 and amorphous Mn2O3 thin films on silicon and glass substrates. The deposition experiments were carried out using three different precursor solutions (0.4, 0.6 and 0.8 M) at 400 degrees C. Depending on the precursor concentration, particulated layers were obtained as evidenced by SEM. The layer thicknesses range from 32 to 170 nm. The rms roughness of the respective films was determined by AFM, displaying that the higher the precursor concentration, the rougher the Co3O4 surface is (17.4-43.8 nm), while the manganese oxide films are almost similar (6.2-9.8 nm).

KW - RAY PHOTOELECTRON-SPECTROSCOPY

KW - ETHYLENE-GLYCOL CARBOXYLATES

KW - MN3O4 NANOPARTICLES

KW - ION BATTERIES

KW - FLOAT GLASS

KW - CO3O4

KW - MORPHOLOGY

KW - LAYERS

KW - TEMPERATURE

KW - ELECTRODE

U2 - 10.1039/c8ra02288g

DO - 10.1039/c8ra02288g

M3 - Article

VL - 8

SP - 15632

EP - 15640

JO - RSC Advances

JF - RSC Advances

SN - 2046-2069

IS - 28

ER -