Chemical vapor deposition of ruthenium-based layers by a single-source approach

Janine Jeschke, Stefan Moeckel, Marcus Korb, Tobias Rueffer, Khaybar Assim, Marcel Melzer, Gordon Herwig, Colin Georgi, Stefan E. Schulz, Heinrich Lang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A series of ruthenium complexes of the general type Ru(CO)(2)(P(n-Bu)(3))(2)(O2CR)(2) (4a, R = Me; 4b, R = Et; 4c, R = i-Pr; 4d, R = t-Bu; 4e, R = CH2OCH3; 4f, R = CF3; 4g, R = CF2CF3) was synthesized by a single-step reaction of Ru-3(CO)(12) with P(n-Bu)(3) and the respective carboxylic acid. The molecular structures of 4b, 4c and 4e-g in the solid state are discussed. All ruthenium complexes are stable against air and moisture and possess low melting points. The physical properties including the vapor pressure can be adjusted by modification of the carboxylate ligands. The chemical vapor deposition of ruthenium precursors 4a-f was carried out in a vertical cold-wall CVD reactor at substrate temperatures between 350 and 400 degrees C in a nitrogen atmosphere. These experiments show that all precursors are well suited for the deposition of phosphorus-doped ruthenium layers without addition of any reactive gas or an additional phosphorus source. In the films, phosphorus contents between 11 and 16 mol% were determined by XPS analysis. The obtained layers possess thicknesses between 25 and 65 nm and are highly conformal and dense as proven by SEM and AFM studies.

Original languageEnglish
Pages (from-to)2319-2328
Number of pages10
JournalJournal of Materials Chemistry C
Volume4
Issue number12
DOIs
Publication statusPublished - 2016
Externally publishedYes

Cite this

Jeschke, J., Moeckel, S., Korb, M., Rueffer, T., Assim, K., Melzer, M., ... Lang, H. (2016). Chemical vapor deposition of ruthenium-based layers by a single-source approach. Journal of Materials Chemistry C, 4(12), 2319-2328. https://doi.org/10.1039/c5tc03930d
Jeschke, Janine ; Moeckel, Stefan ; Korb, Marcus ; Rueffer, Tobias ; Assim, Khaybar ; Melzer, Marcel ; Herwig, Gordon ; Georgi, Colin ; Schulz, Stefan E. ; Lang, Heinrich. / Chemical vapor deposition of ruthenium-based layers by a single-source approach. In: Journal of Materials Chemistry C. 2016 ; Vol. 4, No. 12. pp. 2319-2328.
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abstract = "A series of ruthenium complexes of the general type Ru(CO)(2)(P(n-Bu)(3))(2)(O2CR)(2) (4a, R = Me; 4b, R = Et; 4c, R = i-Pr; 4d, R = t-Bu; 4e, R = CH2OCH3; 4f, R = CF3; 4g, R = CF2CF3) was synthesized by a single-step reaction of Ru-3(CO)(12) with P(n-Bu)(3) and the respective carboxylic acid. The molecular structures of 4b, 4c and 4e-g in the solid state are discussed. All ruthenium complexes are stable against air and moisture and possess low melting points. The physical properties including the vapor pressure can be adjusted by modification of the carboxylate ligands. The chemical vapor deposition of ruthenium precursors 4a-f was carried out in a vertical cold-wall CVD reactor at substrate temperatures between 350 and 400 degrees C in a nitrogen atmosphere. These experiments show that all precursors are well suited for the deposition of phosphorus-doped ruthenium layers without addition of any reactive gas or an additional phosphorus source. In the films, phosphorus contents between 11 and 16 mol{\%} were determined by XPS analysis. The obtained layers possess thicknesses between 25 and 65 nm and are highly conformal and dense as proven by SEM and AFM studies.",
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Jeschke, J, Moeckel, S, Korb, M, Rueffer, T, Assim, K, Melzer, M, Herwig, G, Georgi, C, Schulz, SE & Lang, H 2016, 'Chemical vapor deposition of ruthenium-based layers by a single-source approach' Journal of Materials Chemistry C, vol. 4, no. 12, pp. 2319-2328. https://doi.org/10.1039/c5tc03930d

Chemical vapor deposition of ruthenium-based layers by a single-source approach. / Jeschke, Janine; Moeckel, Stefan; Korb, Marcus; Rueffer, Tobias; Assim, Khaybar; Melzer, Marcel; Herwig, Gordon; Georgi, Colin; Schulz, Stefan E.; Lang, Heinrich.

In: Journal of Materials Chemistry C, Vol. 4, No. 12, 2016, p. 2319-2328.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Chemical vapor deposition of ruthenium-based layers by a single-source approach

AU - Jeschke, Janine

AU - Moeckel, Stefan

AU - Korb, Marcus

AU - Rueffer, Tobias

AU - Assim, Khaybar

AU - Melzer, Marcel

AU - Herwig, Gordon

AU - Georgi, Colin

AU - Schulz, Stefan E.

AU - Lang, Heinrich

PY - 2016

Y1 - 2016

N2 - A series of ruthenium complexes of the general type Ru(CO)(2)(P(n-Bu)(3))(2)(O2CR)(2) (4a, R = Me; 4b, R = Et; 4c, R = i-Pr; 4d, R = t-Bu; 4e, R = CH2OCH3; 4f, R = CF3; 4g, R = CF2CF3) was synthesized by a single-step reaction of Ru-3(CO)(12) with P(n-Bu)(3) and the respective carboxylic acid. The molecular structures of 4b, 4c and 4e-g in the solid state are discussed. All ruthenium complexes are stable against air and moisture and possess low melting points. The physical properties including the vapor pressure can be adjusted by modification of the carboxylate ligands. The chemical vapor deposition of ruthenium precursors 4a-f was carried out in a vertical cold-wall CVD reactor at substrate temperatures between 350 and 400 degrees C in a nitrogen atmosphere. These experiments show that all precursors are well suited for the deposition of phosphorus-doped ruthenium layers without addition of any reactive gas or an additional phosphorus source. In the films, phosphorus contents between 11 and 16 mol% were determined by XPS analysis. The obtained layers possess thicknesses between 25 and 65 nm and are highly conformal and dense as proven by SEM and AFM studies.

AB - A series of ruthenium complexes of the general type Ru(CO)(2)(P(n-Bu)(3))(2)(O2CR)(2) (4a, R = Me; 4b, R = Et; 4c, R = i-Pr; 4d, R = t-Bu; 4e, R = CH2OCH3; 4f, R = CF3; 4g, R = CF2CF3) was synthesized by a single-step reaction of Ru-3(CO)(12) with P(n-Bu)(3) and the respective carboxylic acid. The molecular structures of 4b, 4c and 4e-g in the solid state are discussed. All ruthenium complexes are stable against air and moisture and possess low melting points. The physical properties including the vapor pressure can be adjusted by modification of the carboxylate ligands. The chemical vapor deposition of ruthenium precursors 4a-f was carried out in a vertical cold-wall CVD reactor at substrate temperatures between 350 and 400 degrees C in a nitrogen atmosphere. These experiments show that all precursors are well suited for the deposition of phosphorus-doped ruthenium layers without addition of any reactive gas or an additional phosphorus source. In the films, phosphorus contents between 11 and 16 mol% were determined by XPS analysis. The obtained layers possess thicknesses between 25 and 65 nm and are highly conformal and dense as proven by SEM and AFM studies.

KW - COPPER DIFFUSION BARRIER

KW - THIN-FILMS

KW - ATOMIC LAYER

KW - ALLOY-FILMS

KW - RU FILMS

KW - CU

KW - MOCVD

KW - PRECURSOR

KW - SURFACE

KW - COMPLEXES

U2 - 10.1039/c5tc03930d

DO - 10.1039/c5tc03930d

M3 - Article

VL - 4

SP - 2319

EP - 2328

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 12

ER -