Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD

Gilberto A. Umana-Membreno; Brett Nener; John Dell; Lorenzo Faraone; Giacinta Parish; U.K. Mishra

Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD

Gilberto A. Umana-Membreno, Brett Nener, John Dell, Lorenzo Faraone, Giacinta Parish, U.K. Mishra

Graduate Research School

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Original language	English
Title of host publication	Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000)
Editors	Leonard D. Broekman, Brian F. Usher, John D. Riley
Place of Publication	USA
Publisher	IEEE, Institute of Electrical and Electronics Engineers
Pages	332-335
Volume	1
Edition	La Trobe University, Melbourne
ISBN (Print)	0780366980
Publication status	Published - 2002
Event	Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD - La Trobe University, Melbourne Duration: 1 Jan 2002 → …

Conference

Conference	Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD
Period	1/01/02 → …

Cite this

Umana-Membreno, G. A., Nener, B., Dell, J., Faraone, L., Parish, G., & Mishra, U. K. (2002). Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD. In L. D. Broekman, B. F. Usher, & J. D. Riley (Eds.), Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000) (La Trobe University, Melbourne ed., Vol. 1, pp. 332-335). IEEE, Institute of Electrical and Electronics Engineers.

Umana-Membreno, Gilberto A. ; Nener, Brett ; Dell, John et al. / Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD. Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000). editor / Leonard D. Broekman ; Brian F. Usher ; John D. Riley. Vol. 1 La Trobe University, Melbourne. ed. USA : IEEE, Institute of Electrical and Electronics Engineers, 2002. pp. 332-335

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title = "Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD",

author = "Umana-Membreno, {Gilberto A.} and Brett Nener and John Dell and Lorenzo Faraone and Giacinta Parish and U.K. Mishra",

year = "2002",

language = "English",

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volume = "1",

pages = "332--335",

editor = "Broekman, {Leonard D.} and Usher, {Brian F.} and Riley, {John D.}",

booktitle = "Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000)",

publisher = "IEEE, Institute of Electrical and Electronics Engineers",

address = "United States",

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note = "Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD ; Conference date: 01-01-2002",

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Umana-Membreno, GA , Nener, B , Dell, J , Faraone, L , Parish, G & Mishra, UK 2002, Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD. in LD Broekman, BF Usher & JD Riley (eds), Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000). La Trobe University, Melbourne edn, vol. 1, IEEE, Institute of Electrical and Electronics Engineers, USA, pp. 332-335, Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD, 1/01/02.

Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD. / Umana-Membreno, Gilberto A.; Nener, Brett ; Dell, John et al.
Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000). ed. / Leonard D. Broekman; Brian F. Usher; John D. Riley. Vol. 1 La Trobe University, Melbourne. ed. USA: IEEE, Institute of Electrical and Electronics Engineers, 2002. p. 332-335.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD

AU - Umana-Membreno, Gilberto A.

AU - Nener, Brett

AU - Dell, John

AU - Faraone, Lorenzo

AU - Parish, Giacinta

AU - Mishra, U.K.

PY - 2002

Y1 - 2002

M3 - Conference paper

SN - 0780366980

VL - 1

SP - 332

EP - 335

BT - Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000)

A2 - Broekman, Leonard D.

A2 - Usher, Brian F.

A2 - Riley, John D.

PB - IEEE, Institute of Electrical and Electronics Engineers

CY - USA

T2 - Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD

Y2 - 1 January 2002

ER -

Umana-Membreno GA , Nener B , Dell J , Faraone L , Parish G, Mishra UK. Charge trapping centres in g-irradiated Gallium Nitride grown by MOCVD. In Broekman LD, Usher BF, Riley JD, editors, Proceedings of the Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2000). La Trobe University, Melbourne ed. Vol. 1. USA: IEEE, Institute of Electrical and Electronics Engineers. 2002. p. 332-335