Charge trapping centres in γ-irradiated Gallium Nitride grown by MOCVD

    Research output: Chapter in Book/Conference paperConference paperpeer-review

    Abstract

    Deep-level transient capacitance measurements (DLTS) were performed on Schottky diodes fabricated on undoped MOCVD-grown GaN epilayers before and after exposure to different doses of 60Co gamma-irradiation. The DLTS measurements were performed from 77 to 300 K, and the samples exposed to accumulated doses of 200, 500 and 1000 krad(Si). Three deep-levels were found in the sample prior to irradiation with thermal activation energies of 241 ± 5, 294 ± 32 and 575 ± 2 meV. Our measurements indicate that for low doses (≤ 1Mrad(Si)) no new traps have been induced, and that the traps present in the unirradiated material do not experience any significant change in their characteristics. In contrast, a recent report on 60Co γ-irradiated magnetron-sputtered GaN indicates an increase in the concentrations of deep-levels with thermal activation energies of 590 and 820 meV for accumulated doses of 1 Mrad and above [4].

    Original languageEnglish
    Title of host publicationCOMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
    EditorsLeonard D. Broekman, Brian F. Usher, John D. Riley
    PublisherIEEE, Institute of Electrical and Electronics Engineers
    Pages332-335
    Number of pages4
    Volume2000-January
    ISBN (Electronic)0780366980
    DOIs
    Publication statusPublished - 1 Jan 2000
    EventConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia
    Duration: 6 Dec 20008 Dec 2000

    Conference

    ConferenceConference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
    Country/TerritoryAustralia
    CityBundoora
    Period6/12/008/12/00

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