Abstract
Deep-level transient capacitance measurements (DLTS) were performed on Schottky diodes fabricated on undoped MOCVD-grown GaN epilayers before and after exposure to different doses of 60Co gamma-irradiation. The DLTS measurements were performed from 77 to 300 K, and the samples exposed to accumulated doses of 200, 500 and 1000 krad(Si). Three deep-levels were found in the sample prior to irradiation with thermal activation energies of 241 ± 5, 294 ± 32 and 575 ± 2 meV. Our measurements indicate that for low doses (≤ 1Mrad(Si)) no new traps have been induced, and that the traps present in the unirradiated material do not experience any significant change in their characteristics. In contrast, a recent report on 60Co γ-irradiated magnetron-sputtered GaN indicates an increase in the concentrations of deep-levels with thermal activation energies of 590 and 820 meV for accumulated doses of 1 Mrad and above [4].
Original language | English |
---|---|
Title of host publication | COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices |
Editors | Leonard D. Broekman, Brian F. Usher, John D. Riley |
Publisher | IEEE, Institute of Electrical and Electronics Engineers |
Pages | 332-335 |
Number of pages | 4 |
Volume | 2000-January |
ISBN (Electronic) | 0780366980 |
DOIs | |
Publication status | Published - 1 Jan 2000 |
Event | Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 6 Dec 2000 → 8 Dec 2000 |
Conference
Conference | Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 |
---|---|
Country/Territory | Australia |
City | Bundoora |
Period | 6/12/00 → 8/12/00 |