Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation

Nima Dehdashti, Ali A. Orouji, R. Faez

Research output: Chapter in Book/Conference paperConference paper

Abstract

Nanoscale Shielded channel transistors, are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations for first time. We present self-consistent solutions of ultrathin body device structures to investigate the effect of electrically shielded channel region which impose charge controlling in the channel region on the characteristics of nanoscale DG-MOSFET. The simulation method is based on Nonequlibrium Green's Function (NEGF). Starting from a basic structure with a gate length of 10 nm, the effect of gate length variation on the performance of the device has been investigated.

Original languageEnglish
Title of host publicationPROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007
EditorsKL Narasimhan, DK Sharma
PublisherWiley-IEEE Press
Pages127-129
Number of pages3
ISBN (Print)978-1-4244-1727-8
DOIs
Publication statusPublished - 2007
Event14th International Workshop on the Physics of Semiconductor Devices - Mumbai, India
Duration: 17 Dec 200720 Dec 2007

Conference

Conference14th International Workshop on the Physics of Semiconductor Devices
CountryIndia
CityMumbai
Period17/12/0720/12/07

Cite this

Dehdashti, N., Orouji, A. A., & Faez, R. (2007). Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation. In KL. Narasimhan, & DK. Sharma (Eds.), PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007 (pp. 127-129). Wiley-IEEE Press. https://doi.org/10.1109/IWPSD.2007.4472469