Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation

Nima Dehdashti; Ali A. Orouji; R. Faez

doi:10.1109/IWPSD.2007.4472469

Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation

Nima Dehdashti, Ali A. Orouji, R. Faez

School of Engineering

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

Abstract

Nanoscale Shielded channel transistors, are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations for first time. We present self-consistent solutions of ultrathin body device structures to investigate the effect of electrically shielded channel region which impose charge controlling in the channel region on the characteristics of nanoscale DG-MOSFET. The simulation method is based on Nonequlibrium Green's Function (NEGF). Starting from a basic structure with a gate length of 10 nm, the effect of gate length variation on the performance of the device has been investigated.

Original language	English
Title of host publication	PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007
Editors	KL Narasimhan, DK Sharma
Publisher	Wiley-IEEE Press
Pages	127-129
Number of pages	3
ISBN (Print)	978-1-4244-1727-8
DOIs	https://doi.org/10.1109/IWPSD.2007.4472469
Publication status	Published - 2007
Event	14th International Workshop on the Physics of Semiconductor Devices - Mumbai, India Duration: 17 Dec 2007 → 20 Dec 2007

Conference

Conference	14th International Workshop on the Physics of Semiconductor Devices
Country/Territory	India
City	Mumbai
Period	17/12/07 → 20/12/07

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10.1109/IWPSD.2007.4472469

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@inproceedings{dacb638d629b4c11b4661000672f57c9,

title = "Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation",

abstract = "Nanoscale Shielded channel transistors, are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations for first time. We present self-consistent solutions of ultrathin body device structures to investigate the effect of electrically shielded channel region which impose charge controlling in the channel region on the characteristics of nanoscale DG-MOSFET. The simulation method is based on Nonequlibrium Green's Function (NEGF). Starting from a basic structure with a gate length of 10 nm, the effect of gate length variation on the performance of the device has been investigated.",

keywords = "two-dimensional quantum simulation, non-equilibrium green's function (NEGF), shielded channel DGMOSFET, charge controllog",

author = "Nima Dehdashti and Orouji, {Ali A.} and R. Faez",

year = "2007",

doi = "10.1109/IWPSD.2007.4472469",

language = "English",

isbn = "978-1-4244-1727-8",

pages = "127--129",

editor = "KL Narasimhan and DK Sharma",

booktitle = "PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007",

publisher = "Wiley-IEEE Press",

note = "14th International Workshop on the Physics of Semiconductor Devices ; Conference date: 17-12-2007 Through 20-12-2007",

}

Dehdashti, N, Orouji, AA & Faez, R 2007, Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation. in KL Narasimhan & DK Sharma (eds), PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007. Wiley-IEEE Press, pp. 127-129, 14th International Workshop on the Physics of Semiconductor Devices, Mumbai, India, 17/12/07. https://doi.org/10.1109/IWPSD.2007.4472469

Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation. / Dehdashti, Nima; Orouji, Ali A.; Faez, R.
PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007. ed. / KL Narasimhan; DK Sharma. Wiley-IEEE Press, 2007. p. 127-129.

Research output: Chapter in Book/Conference paper › Conference paper › peer-review

TY - GEN

T1 - Charge controlling in nanoscale shielded channel DG-MOSFET

T2 - 14th International Workshop on the Physics of Semiconductor Devices

AU - Dehdashti, Nima

AU - Orouji, Ali A.

AU - Faez, R.

PY - 2007

Y1 - 2007

N2 - Nanoscale Shielded channel transistors, are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations for first time. We present self-consistent solutions of ultrathin body device structures to investigate the effect of electrically shielded channel region which impose charge controlling in the channel region on the characteristics of nanoscale DG-MOSFET. The simulation method is based on Nonequlibrium Green's Function (NEGF). Starting from a basic structure with a gate length of 10 nm, the effect of gate length variation on the performance of the device has been investigated.

AB - Nanoscale Shielded channel transistors, are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations for first time. We present self-consistent solutions of ultrathin body device structures to investigate the effect of electrically shielded channel region which impose charge controlling in the channel region on the characteristics of nanoscale DG-MOSFET. The simulation method is based on Nonequlibrium Green's Function (NEGF). Starting from a basic structure with a gate length of 10 nm, the effect of gate length variation on the performance of the device has been investigated.

KW - two-dimensional quantum simulation

KW - non-equilibrium green's function (NEGF)

KW - shielded channel DGMOSFET

KW - charge controllog

U2 - 10.1109/IWPSD.2007.4472469

DO - 10.1109/IWPSD.2007.4472469

M3 - Conference paper

SN - 978-1-4244-1727-8

SP - 127

EP - 129

BT - PROCEEDINGS OF THE 2007 INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES: IWPSD-2007

A2 - Narasimhan, KL

A2 - Sharma, DK

PB - Wiley-IEEE Press

Y2 - 17 December 2007 through 20 December 2007

ER -

Charge controlling in nanoscale shielded channel DG-MOSFET: A quantum simulation

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