Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors

Martin Kocan, Gilberto A. Umana Membreno, J.S. Chung, F. Recht, L. Mccarthy, S. Keller, Umesh Mishra, Giacinta Parish, Brett Nener

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4 Citations (Scopus)

Abstract

This paper reports results of a study of non-alloyed ohmic contacts on Si-implanted AlGaN/GaN heterostructures, obtained from current-voltage characteristics of transfer-length method (TLM) test structures. It is shown that the measured contact resistance from the Ti/Au/Ni metal contacts, deposited on Si-implanted regions, to the two-dimensional electron gas channel at the AlGaN/GaN heterointerface of the non-implanted region, is formed by three different components: (i) contact resistance between the metal and the semiconductor (0.60 +/- 0.16 ohm mm), (ii) resistance of the implanted region (0.62 +/- 0.03 ohm mm) and (iii) an additional resistance (0.72 +/- 0.24 ohm mm) giving a total value of 1.9 +/- 0.3 ohm mm. The specific ohmic contact resistance was determined to be (2.4 +/- 0.5) x 10(-5) ohm cm(2).
Original languageEnglish
Pages (from-to)1156-1159
JournalJournal of Electronic Materials
Volume36
Issue number9
DOIs
Publication statusPublished - 2007

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