In an attempt to address the problems limiting the application of HgCdTe for next generation infrared detectors and imaging FPAs, this study proposes alternative solutions in terms of better n-type doping, large area alternative substrates, and a majority-carrier barrier composed of HgTe-CdTe superlattice material for nBn heterostructures. In addition, growth of HgCdSe ternary alloys as an alternative material system to HgCdTe, has also been studied. In this thesis, molecular beam epitaxy (MBE) has been used to grow the infrared materials for the various studies, and characterization of these materials comprises a major part of this thesis.
|Qualification||Doctor of Philosophy|
|Award date||21 May 2018|
|Publication status||Unpublished - 2017|