Characterization of MBE-grown HgCdTe and related II-VI materials for next generation infrared detectors

Imtiaz Madni

Research output: ThesisDoctoral Thesis

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Abstract

In an attempt to address the problems limiting the application of HgCdTe for next generation infrared detectors and imaging FPAs, this study proposes alternative solutions in terms of better n-type doping, large area alternative substrates, and a majority-carrier barrier composed of HgTe-CdTe superlattice material for nBn heterostructures. In addition, growth of HgCdSe ternary alloys as an alternative material system to HgCdTe, has also been studied. In this thesis, molecular beam epitaxy (MBE) has been used to grow the infrared materials for the various studies, and characterization of these materials comprises a major part of this thesis.
Original languageEnglish
QualificationDoctor of Philosophy
Awarding Institution
  • The University of Western Australia
Supervisors/Advisors
  • Faraone, Lorenzo, Supervisor
  • Antoszewski, Jarek, Supervisor
  • Lei, Wen, Supervisor
Thesis sponsors
Award date21 May 2018
DOIs
Publication statusUnpublished - 2017

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infrared detectors
molecular beam epitaxy
theses
majority carriers
ternary alloys

Cite this

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title = "Characterization of MBE-grown HgCdTe and related II-VI materials for next generation infrared detectors",
abstract = "In an attempt to address the problems limiting the application of HgCdTe for next generation infrared detectors and imaging FPAs, this study proposes alternative solutions in terms of better n-type doping, large area alternative substrates, and a majority-carrier barrier composed of HgTe-CdTe superlattice material for nBn heterostructures. In addition, growth of HgCdSe ternary alloys as an alternative material system to HgCdTe, has also been studied. In this thesis, molecular beam epitaxy (MBE) has been used to grow the infrared materials for the various studies, and characterization of these materials comprises a major part of this thesis.",
keywords = "II-VI materials, MBE growth, IR detectors, Quantum physics, Semiconductors, 4th generation detectors, Thin film characterization, Nano electronics",
author = "Imtiaz Madni",
year = "2017",
doi = "10.4225/23/5b308df9dc0c3",
language = "English",
school = "The University of Western Australia",

}

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AU - Madni, Imtiaz

PY - 2017

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N2 - In an attempt to address the problems limiting the application of HgCdTe for next generation infrared detectors and imaging FPAs, this study proposes alternative solutions in terms of better n-type doping, large area alternative substrates, and a majority-carrier barrier composed of HgTe-CdTe superlattice material for nBn heterostructures. In addition, growth of HgCdSe ternary alloys as an alternative material system to HgCdTe, has also been studied. In this thesis, molecular beam epitaxy (MBE) has been used to grow the infrared materials for the various studies, and characterization of these materials comprises a major part of this thesis.

AB - In an attempt to address the problems limiting the application of HgCdTe for next generation infrared detectors and imaging FPAs, this study proposes alternative solutions in terms of better n-type doping, large area alternative substrates, and a majority-carrier barrier composed of HgTe-CdTe superlattice material for nBn heterostructures. In addition, growth of HgCdSe ternary alloys as an alternative material system to HgCdTe, has also been studied. In this thesis, molecular beam epitaxy (MBE) has been used to grow the infrared materials for the various studies, and characterization of these materials comprises a major part of this thesis.

KW - II-VI materials

KW - MBE growth

KW - IR detectors

KW - Quantum physics

KW - Semiconductors

KW - 4th generation detectors

KW - Thin film characterization

KW - Nano electronics

U2 - 10.4225/23/5b308df9dc0c3

DO - 10.4225/23/5b308df9dc0c3

M3 - Doctoral Thesis

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