Characterization of CdMnTe radiation detectors using current and charge transients

Ramin Rafiei; M.I. Reinhard; A. Sarbutt; S. Uxa; D. Boardman; G.C. Watt; E. Belas; K. Kim; A.E. Bolotnikov; R.B. James

doi:10.1088/1674-4926/34/7/073001

Characterization of CdMnTe radiation detectors using current and charge transients

Ramin Rafiei, M.I. Reinhard, A. Sarbutt, S. Uxa, D. Boardman, G.C. Watt, E. Belas, K. Kim, A.E. Bolotnikov, R.B. James

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	7pp
Journal	Journal of Semiconductors
Volume	34
Issue number	7
DOIs	https://doi.org/10.1088/1674-4926/34/7/073001
Publication status	Published - 2013

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10.1088/1674-4926/34/7/073001

Cite this

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title = "Characterization of CdMnTe radiation detectors using current and charge transients",

author = "Ramin Rafiei and M.I. Reinhard and A. Sarbutt and S. Uxa and D. Boardman and G.C. Watt and E. Belas and K. Kim and A.E. Bolotnikov and R.B. James",

year = "2013",

doi = "10.1088/1674-4926/34/7/073001",

language = "English",

volume = "34",

pages = "7pp",

journal = "Journal of Semiconductors",

issn = "1674-4926",

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T1 - Characterization of CdMnTe radiation detectors using current and charge transients

AU - Rafiei, Ramin

AU - Reinhard, M.I.

AU - Sarbutt, A.

AU - Uxa, S.

AU - Boardman, D.

AU - Watt, G.C.

AU - Belas, E.

AU - Kim, K.

AU - Bolotnikov, A.E.

AU - James, R.B.

PY - 2013

Y1 - 2013

U2 - 10.1088/1674-4926/34/7/073001

DO - 10.1088/1674-4926/34/7/073001

M3 - Article

VL - 34

SP - 7pp

JO - Journal of Semiconductors

JF - Journal of Semiconductors

SN - 1674-4926

IS - 7

ER -