Abstract
We report on mobility spectrum analysis of electrical transport in a GaSb/InAs superlattice (SL) grown on GaSb substrate. Despite domineering contribution to conduction from the substrate, it was possible to discern and characterize carriers from SL. A single electron specie with an ambient temperature mobility of ~104 cm2/V s was found to emanate from SL. We show that this carrier has an activation energy of 0.27 eV and is associated with the SL band gap.
Original language | English |
---|---|
Pages (from-to) | 012121-1 to 012121-3 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2008 |