We report on mobility spectrum analysis of electrical transport in a GaSb/InAs superlattice (SL) grown on GaSb substrate. Despite domineering contribution to conduction from the substrate, it was possible to discern and characterize carriers from SL. A single electron specie with an ambient temperature mobility of ~104 cm2/V s was found to emanate from SL. We show that this carrier has an activation energy of 0.27 eV and is associated with the SL band gap.
Chandrasekhar Rao, T. V., Antoszewski, J., Faraone, L., Rodriguez, B., Plis, E., & Krishna, S. (2008). Characterization of carriers in GaSb/InAs superlattice grown on conductive GaSb substrate. Applied Physics Letters, 92(1), 012121-1 to 012121-3. https://doi.org/10.1063/1.2831666