Characterization of carriers in GaSb/InAs superlattice grown on conductive GaSb substrate

T.V. Chandrasekhar Rao; Jarek Antoszewski; Lorenzo Faraone; B. Rodriguez; E. Plis; S. Krishna

doi:10.1063/1.2831666

Characterization of carriers in GaSb/InAs superlattice grown on conductive GaSb substrate

T.V. Chandrasekhar Rao, Jarek Antoszewski, Lorenzo Faraone, B. Rodriguez, E. Plis, S. Krishna

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Abstract

We report on mobility spectrum analysis of electrical transport in a GaSb/InAs superlattice (SL) grown on GaSb substrate. Despite domineering contribution to conduction from the substrate, it was possible to discern and characterize carriers from SL. A single electron specie with an ambient temperature mobility of ~10⁴ cm²/V s was found to emanate from SL. We show that this carrier has an activation energy of 0.27 eV and is associated with the SL band gap.

Original language	English
Pages (from-to)	012121-1 to 012121-3
Journal	Applied Physics Letters
Volume	92
Issue number	1
DOIs	https://doi.org/10.1063/1.2831666
Publication status	Published - 2008

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@article{483cafad906142ca98710f006e2c0b92,

title = "Characterization of carriers in GaSb/InAs superlattice grown on conductive GaSb substrate",

abstract = "We report on mobility spectrum analysis of electrical transport in a GaSb/InAs superlattice (SL) grown on GaSb substrate. Despite domineering contribution to conduction from the substrate, it was possible to discern and characterize carriers from SL. A single electron specie with an ambient temperature mobility of ~104 cm2/V s was found to emanate from SL. We show that this carrier has an activation energy of 0.27 eV and is associated with the SL band gap.",

author = "{Chandrasekhar Rao}, T.V. and Jarek Antoszewski and Lorenzo Faraone and B. Rodriguez and E. Plis and S. Krishna",

year = "2008",

doi = "10.1063/1.2831666",

language = "English",

volume = "92",

pages = "012121--1 to 012121--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "ACOUSTICAL SOC AMER AMER INST PHYSICS",

number = "1",

}

TY - JOUR

T1 - Characterization of carriers in GaSb/InAs superlattice grown on conductive GaSb substrate

AU - Chandrasekhar Rao, T.V.

AU - Antoszewski, Jarek

AU - Faraone, Lorenzo

AU - Rodriguez, B.

AU - Plis, E.

AU - Krishna, S.

PY - 2008

Y1 - 2008

N2 - We report on mobility spectrum analysis of electrical transport in a GaSb/InAs superlattice (SL) grown on GaSb substrate. Despite domineering contribution to conduction from the substrate, it was possible to discern and characterize carriers from SL. A single electron specie with an ambient temperature mobility of ~104 cm2/V s was found to emanate from SL. We show that this carrier has an activation energy of 0.27 eV and is associated with the SL band gap.

AB - We report on mobility spectrum analysis of electrical transport in a GaSb/InAs superlattice (SL) grown on GaSb substrate. Despite domineering contribution to conduction from the substrate, it was possible to discern and characterize carriers from SL. A single electron specie with an ambient temperature mobility of ~104 cm2/V s was found to emanate from SL. We show that this carrier has an activation energy of 0.27 eV and is associated with the SL band gap.

U2 - 10.1063/1.2831666

DO - 10.1063/1.2831666

M3 - Article

VL - 92

SP - 012121-1 to 012121-3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

ER -