Characterization and optimization of electrical properties of porous silicon - a path to enable sensitive thermo-resistive detectors

Uncooled thermal imaging cameras find their usage in surveillance, imaging radiometry and spectro-radiometry applications, are based on thermo-resistive detectors. Although these detectors are commercially in use, their utility is restricted by high cost and poor performance which arises from the unavailability of sensing materials that are compatible with standard microfabrication techniques and have optimised properties. Hence, a continuous drive exists to enhance or replace the conventional sensing materials used in these detectors. The objective of the present thesis is to explore the potential of porous silicon films to be used as a temperature sensing material in next generation thermal detectors.