Characteristics of low temperature PECVD silicon nitride for MEMS structural materials

H. Huang, Alexandra Suvorova, K.J. Winchester, John Dell, Lorenzo Faraone

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Materials and mechanical characteristics of the low temperature PECVD silicon nitrides have been investigated using various analytical and testing techniques. TEM and SEM examinations reveal that there is no distinct microstructural difference existing between the films deposited under different conditions. However, their mechanical properties determined by nanoindentation indicate otherwise. The variations in mechanical properties with deposition conditions are found to be strongly correlated to the change in silicon-to-nitrogen ratio in the film.
Original languageEnglish
Pages (from-to)3799-3804
JournalInternational Journal of Modern Physics B
Volume20
Issue number25-27
DOIs
Publication statusPublished - 2006

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